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20250185431. Photoelectronic (KOREA ADVANCED NANO FAB CENTER)

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Revision as of 04:59, 11 June 2025 by Wikipatents (talk | contribs) (Automated patent report)
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PHOTOELECTRONIC DEVICE WITH MULTIPLE WAVELENGTHS

Abstract: disclosed is an optimal structure that improves the spatial arrangement efficiency of electrodes and further increases luminous efficacy by designing the shape and structure of photo-device portions and controlling open areas. in particular, provided is a full-color rgb pixel that exhibits excellent reproducibility over a large area and can be mass-produced by forming a plurality of photo-device layers, each including an active layer and a common semiconductor layer in a vertical direction, and forming a plurality of photo-device portions in a horizontal direction on a substrate by selective etching and opening processes.

Inventor(s): Hyeong Ho PARK, Eun Jeon YOUN, Eun-Kyung CHU

CPC Classification: H10H29/10 (No explanation available)

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