18223238. IMAGE SENSOR simplified abstract (Samsung Electronics Co., Ltd.)

From WikiPatents
Revision as of 08:46, 31 May 2024 by Wikipatents (talk | contribs) (Creating a new page)
(diff) ← Older revision | Latest revision (diff) | Newer revision → (diff)
Jump to navigation Jump to search

IMAGE SENSOR

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

JONGHYUN Go of Suwon-si (KR)

IMAGE SENSOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 18223238 titled 'IMAGE SENSOR

Simplified Explanation

The image sensor described in the patent application includes a unique structure where the source and drain regions are adjacent to the source follower gate pattern, with a gate insulating layer in between. The source follower gate pattern has a body portion on the active region and a buried portion in a recess region, protruding below the body portion.

  • The image sensor substrate has an active region with source and drain regions.
  • The source follower gate pattern is located on the active region, with the drain and source regions adjacent to its side surfaces.
  • A gate insulating layer separates the active region from the source follower gate pattern.
  • The buried portion of the source follower gate pattern is provided in a recess region in the active region.
  • The distance between the buried portion and the first side surface is at least 0.1 times the distance between the first and second side surfaces, but less than 0.5 times.

Potential Applications

The technology described in this patent application could be applied in:

  • Digital cameras
  • Smartphones
  • Surveillance cameras
  • Medical imaging devices

Problems Solved

This technology helps in:

  • Improving image sensor performance
  • Enhancing image quality
  • Reducing noise in captured images

Benefits

The benefits of this technology include:

  • Higher sensitivity
  • Lower power consumption
  • Improved signal-to-noise ratio

Potential Commercial Applications

A potential commercial application for this technology could be in:

  • Consumer electronics
  • Automotive cameras
  • Security systems

Possible Prior Art

One possible prior art for this technology could be:

  • Image sensors with similar gate patterns and structures from other patents or research papers.

Unanswered Questions

How does this technology compare to existing image sensor designs in terms of performance and efficiency?

This article does not provide a direct comparison with existing image sensor designs, so it is unclear how this technology stacks up against current solutions.

What are the potential manufacturing challenges associated with implementing this new image sensor design?

The article does not address any potential manufacturing challenges that may arise when producing image sensors with this new design.


Original Abstract Submitted

An image sensor includes a substrate including an active region with source and drain regions, a source follower gate pattern on the active region, the drain and source regions being adjacent to first and second side surfaces of the source follower gate pattern, respectively, and a gate insulating layer between the active region and the source follower gate pattern. An upper portion of the active region includes a recess region, and the source follower gate pattern includes a body portion on the active region and a buried portion provided in the recess region and protruding below the body portion. A distance between the first and second side surfaces is a first length, and a distance between a center of the buried portion and the first side surface is a second length. The second length is greater than or equal to 0.1 times the first length and is less than 0.5 times the first length.