18226037. SEMICONDUCTOR DEVICE INCLUDING COMMON BODY BIAS REGION simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE INCLUDING COMMON BODY BIAS REGION
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE INCLUDING COMMON BODY BIAS REGION - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE INCLUDING COMMON BODY BIAS REGION
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE INCLUDING COMMON BODY BIAS REGION - A simplified explanation of the abstract
This abstract first appeared for US patent application 18226037 titled 'SEMICONDUCTOR DEVICE INCLUDING COMMON BODY BIAS REGION
Simplified Explanation
The semiconductor device described in the abstract includes a substrate, a P-well region, a first N-type metal oxide semiconductor (NMOS) transistor in the P-well region, a second NMOS transistor on the substrate, and a common body bias region between the two transistors, contacting both the P-well region and the substrate.
- The semiconductor device consists of a substrate, P-well region, and two NMOS transistors with a common body bias region.
- The first NMOS transistor is located in the P-well region, while the second NMOS transistor is situated on the substrate.
- The common body bias region is positioned between the two transistors, connecting the P-well region and the substrate.
Potential Applications
The technology described in this patent application could be applied in:
- Integrated circuits
- Power management systems
- Battery-operated devices
Problems Solved
This technology helps in:
- Improving performance and efficiency of semiconductor devices
- Enhancing power management capabilities
- Reducing power consumption
Benefits
The benefits of this technology include:
- Enhanced overall performance of semiconductor devices
- Improved power efficiency
- Extended battery life in portable devices
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Consumer electronics
- Automotive industry
- Telecommunications sector
Possible Prior Art
One possible prior art for this technology could be:
- Previous patents related to body biasing techniques in semiconductor devices
Unanswered Questions
How does this technology compare to existing body biasing techniques in semiconductor devices?
This article does not provide a direct comparison to existing body biasing techniques in semiconductor devices.
What specific improvements in performance can be expected from implementing this technology?
The article does not detail specific performance improvements resulting from the implementation of this technology.
Original Abstract Submitted
A semiconductor device includes a substrate, a P-well region, a first N-type metal oxide semiconductor (NMOS) transistor provided in the P-well region, a second NMOS transistor provided on the substrate, and a common body bias region provided between the first NMOS transistor and the second NMOS transistor and contacting both the P-well region and the substrate.
