18467330. SEMICONDUCTOR CHIP AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)

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SEMICONDUCTOR CHIP AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Jihun Jung of Suwon-si (KR)

Unbyoung Kang of Suwon-si (KR)

Yeongkwon Ko of Suwon-si (KR)

Seunghun Shin of Suwon-si (KR)

SEMICONDUCTOR CHIP AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18467330 titled 'SEMICONDUCTOR CHIP AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME

Simplified Explanation

The semiconductor chip described in the abstract includes a semiconductor substrate with through electrodes, wiring structures, front and rear chip connection pads, and insulating layers. The front insulating layer has a cover insulating portion that covers a side surface of the inter-wire insulating layer.

  • Semiconductor chip with through electrodes and wiring structures
  • Front and rear chip connection pads for electrical connections
  • Insulating layers for protection and isolation
  • Front insulating layer with cover insulating portion

Potential Applications

This technology could be applied in the manufacturing of advanced semiconductor devices, such as integrated circuits, microprocessors, and memory chips.

Problems Solved

This technology helps in improving the electrical connectivity and reliability of semiconductor chips by providing a structured layout with through electrodes and wiring structures.

Benefits

The semiconductor chip design described in the patent application offers enhanced performance, increased durability, and improved signal transmission capabilities.

Potential Commercial Applications

The technology could find applications in various industries, including electronics, telecommunications, automotive, and aerospace, where high-performance semiconductor chips are required.

Possible Prior Art

One possible prior art could be the use of similar through-electrode structures in semiconductor chips for improved electrical connections and signal transmission.

Unanswered Questions

How does this technology compare to existing semiconductor chip designs in terms of performance and reliability?

The article does not provide a direct comparison between this technology and existing semiconductor chip designs.

What are the potential limitations or challenges in implementing this technology on a large scale?

The article does not address any potential limitations or challenges in implementing this technology on a large scale.


Original Abstract Submitted

A semiconductor chip including a semiconductor substrate having an active surface and a non-active surface opposite to each other, a plurality of through electrodes passing through the semiconductor substrate, a plurality of wiring structures on the active surface and electrically connected to the plurality of through electrodes, an inter-wire insulating layer surrounding the plurality of wiring structures, a plurality of front chip connection pads electrically connected to the plurality of wiring structures, a front insulating layer surrounding the plurality of front chip connection pads, on the inter-wire insulating layer, a plurality of rear chip connection pads disposed on the non-active surface and electrically connected to the plurality of through electrodes, and a rear insulating layer surrounding the plurality of rear chip connection pads, on the non-active surface, wherein the front insulating layer includes a cover insulating portion covering a side surface of the inter-wire insulating layer may be provided.