20250185317. Nanoribbon Thick Gate Device (Intel)
NANORIBBON THICK GATE DEVICES WITH DIFFERENTIAL RIBBON SPACING AND WIDTH FOR SOC APPLICATIONS
Abstract: embodiments disclosed herein include nanowire and nanoribbon devices with non-uniform dielectric thicknesses. in an embodiment, the semiconductor device comprises a substrate and a plurality of first semiconductor layers in a vertical stack over the substrate. the first semiconductor layers may have a first spacing. in an embodiment, a first dielectric surrounds each of the first semiconductor layers, and the first dielectric has a first thickness. the semiconductor device may further comprise a plurality of second semiconductor layers in a vertical stack over the substrate, where the second semiconductor layers have a second spacing that is greater than the first spacing. in an embodiment a second dielectric surrounds each of the second semiconductor layers, and the second dielectric has a second thickness that is greater than the first thickness.
Inventor(s): Tanuj TRIVEDI, Rahul RAMASWAMY, Jeong Dong KIM, Ting CHANG, Walid M. HAFEZ, Babak FALLAHAZAD, Hsu-Yu CHANG, Nidhi NIDHI
CPC Classification: H10D62/121 (No explanation available)
Search for rejections for patent application number 20250185317
- Patent Applications
- Intel Corporation
- CPC H10D62/121
- Tanuj TRIVEDI of Hillsboro OR US
- Rahul RAMASWAMY of Portland OR US
- Jeong Dong KIM of Scappoose OR US
- Ting CHANG of Portland OR US
- Walid M. HAFEZ of Portland OR US
- Babak FALLAHAZAD of Portland OR US
- Hsu-Yu CHANG of Hillsboro OR US
- Nidhi NIDHI of Hillsboro OR US