18378182. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.9.1 Unanswered Questions
- 1.9.2 How does this technology compare to existing semiconductor device structures in terms of performance and reliability?
- 1.9.3 What are the specific materials used in the construction of the barrier layer and interlayer insulating layer, and how do they contribute to the overall functionality of the device?
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Yong Jin Shin of Suwon-si (KR)
Kyoung Min Woo of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18378182 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes a substrate with a cell region and a peripheral region, a lower electrode on the cell region, an upper electrode surrounding the lower electrode, a capacitor dielectric layer between the electrodes, a barrier layer, an interlayer insulating layer, and a contact connecting to the upper electrode.
- Lower electrode on cell region of substrate
- Upper electrode surrounding lower electrode
- Capacitor dielectric layer between electrodes
- Barrier layer on upper electrode
- Interlayer insulating layer covering barrier layer
- Contact penetrating barrier and insulating layers
Potential Applications
This technology could be applied in the manufacturing of advanced semiconductor devices, such as memory chips, processors, and other integrated circuits.
Problems Solved
This technology helps in improving the performance and efficiency of semiconductor devices by providing a reliable and stable connection between the electrodes.
Benefits
The benefits of this technology include enhanced device functionality, increased data storage capacity, improved signal processing speed, and overall better performance of semiconductor devices.
Potential Commercial Applications
The potential commercial applications of this technology could be in the semiconductor industry for the production of high-performance electronic devices.
Possible Prior Art
One possible prior art could be the use of similar barrier layers and interlayer insulating layers in semiconductor devices to improve their reliability and performance.
Unanswered Questions
How does this technology compare to existing semiconductor device structures in terms of performance and reliability?
This article does not provide a direct comparison with existing semiconductor device structures in terms of performance and reliability. It would be beneficial to have a detailed analysis of how this technology improves upon current designs.
What are the specific materials used in the construction of the barrier layer and interlayer insulating layer, and how do they contribute to the overall functionality of the device?
The article does not delve into the specific materials used in the barrier layer and interlayer insulating layer or their individual contributions to the device's functionality. Understanding the materials and their roles could provide insights into the technology's effectiveness.
Original Abstract Submitted
A semiconductor device includes a substrate having a cell region and a peripheral region surrounding the cell region, a lower electrode extending in a vertical direction on the cell region of the substrate, an upper electrode surrounding a sidewall and a top surface of the lower electrode, a capacitor dielectric layer disposed between the lower electrode and the upper electrode, a first barrier layer disposed on the upper electrode, the first barrier layer in contact with each of a sidewall and a top surface of the upper electrode, a first interlayer insulating layer covering the first barrier layer, the first interlayer insulating layer including a material different from the first barrier layer, and a first contact penetrating through the first barrier layer and the first interlayer insulating layer in the vertical direction, the first contact connected to the upper electrode.
