18462796. METHOD OF CORRECTING EUV OVERLAY AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 METHOD OF CORRECTING EUV OVERLAY AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD OF CORRECTING EUV OVERLAY AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
METHOD OF CORRECTING EUV OVERLAY AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING THE SAME
Organization Name
Inventor(s)
Seongchul Hong of Suwon-si (KR)
METHOD OF CORRECTING EUV OVERLAY AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18462796 titled 'METHOD OF CORRECTING EUV OVERLAY AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING THE SAME
Simplified Explanation
The extreme ultraviolet (EUV) overlay correcting method involves using a deformed reticle to correct overlay errors in an EUV exposure process for semiconductor device manufacturing.
- Formation of first photoresist (PR) pattern on a wafer using EUV exposure process
- Inspection and calculation of overlay error for the first PR pattern
- Deformation data calculation of the reticle based on overlay error
- Application of voltage to create a deformed reticle
- Formation of second PR pattern on the wafer using deformed reticle
Potential Applications
The technology can be applied in the semiconductor industry for manufacturing advanced devices with improved overlay accuracy.
Problems Solved
This method addresses the challenge of overlay errors in EUV exposure processes, ensuring precise alignment of patterns on semiconductor wafers.
Benefits
The benefits of this technology include enhanced precision in semiconductor device manufacturing, leading to higher performance and reliability of the final products.
Potential Commercial Applications
The technology can be commercially utilized by semiconductor manufacturers looking to enhance the quality and efficiency of their production processes.
Possible Prior Art
Prior art in the field of semiconductor lithography may include methods for overlay correction using different exposure techniques or alignment strategies.
Unanswered Questions
How does the deformed reticle improve overlay accuracy compared to traditional methods?
The deformed reticle allows for customized correction of overlay errors based on specific deformation data, potentially offering more precise alignment than standard correction techniques.
What are the limitations of this EUV overlay correcting method in terms of scalability and cost-effectiveness?
While the method may improve overlay accuracy, there could be challenges in scaling up the process for mass production and potential cost implications associated with implementing the technology on a larger scale.
Original Abstract Submitted
There is provided an extreme ultraviolet (EUV) overlay correcting method capable of effectively correcting an overlay error in an EUV exposure process and a method of manufacturing a semiconductor device including the same. The EUV overlay correcting method includes forming a first photoresist (PR) pattern on a wafer by performing an EUV exposure process using a reticle, inspecting an EUV overlay for the first PR pattern and obtaining a first overlay for a first overlay parameter in which an overlay three-dimensionally increases away from a center to opposing sides of the first PR pattern in a first direction perpendicular to a scan direction, calculating deformation data of the reticle based on the first overlay, applying a voltage to a clamp electrode of a reticle stage to create the reticle into a deformed reticle, and forming a second PR pattern on the wafer by performing an EUV exposure process using the deformed reticle.
