18330729. OPTICAL PROXIMITY CORRECTION METHOD AND PHOTOMASK FABRICATION METHOD USING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 OPTICAL PROXIMITY CORRECTION METHOD AND PHOTOMASK FABRICATION METHOD USING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 OPTICAL PROXIMITY CORRECTION METHOD AND PHOTOMASK FABRICATION METHOD USING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
OPTICAL PROXIMITY CORRECTION METHOD AND PHOTOMASK FABRICATION METHOD USING THE SAME
Organization Name
Inventor(s)
Joobyoung Kim of San Jose CA (US)
OPTICAL PROXIMITY CORRECTION METHOD AND PHOTOMASK FABRICATION METHOD USING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18330729 titled 'OPTICAL PROXIMITY CORRECTION METHOD AND PHOTOMASK FABRICATION METHOD USING THE SAME
Simplified Explanation
The abstract describes a photomask fabrication method involving optical proximity correction (OPC) on a design pattern to create a correction pattern for the photomask.
- Performing an optical proximity correction (OPC) on a design pattern
- Generating a correction pattern for the photomask
- Dividing the design pattern into segments and producing hash values for each segment
- Applying a correction bias to segments with the same hash value
- Producing hash values by generating key segments, creating query regions, and analyzing pattern images
Potential Applications
The technology can be applied in semiconductor manufacturing, specifically in the production of photomasks for integrated circuits.
Problems Solved
This technology helps improve the accuracy and precision of photomask fabrication, leading to better quality integrated circuits with reduced defects.
Benefits
The method increases the efficiency of photomask production, enhances the resolution of design patterns, and ultimately contributes to the overall performance of semiconductor devices.
Potential Commercial Applications
One potential commercial application of this technology is in the semiconductor industry for the mass production of photomasks used in integrated circuit manufacturing.
Possible Prior Art
Prior art in photomask fabrication methods may include traditional techniques such as optical lithography and electron beam lithography.
Unanswered Questions
How does this method compare to traditional photomask fabrication techniques?
This article does not provide a direct comparison between this method and traditional photomask fabrication techniques.
What are the specific parameters used in generating hash values for the design pattern segments?
The article does not delve into the specific parameters or algorithms used in generating hash values for the design pattern segments.
Original Abstract Submitted
A photomask fabrication method comprising performing an optical proximity correction (OPC) on a design pattern to generate a correction pattern, and manufacturing the photomask having the correction pattern. The step of performing the OPC includes dividing the design pattern into a plurality of segments, producing a hash value for each of the plurality of segments, and generating the correction pattern by applying a first correction bias to ones of the plurality of segments having a same hash value, wherein at least two of the plurality of segments have the same hash value. The step of producing the hash value includes generating a key segment in a target segment, creating a query region around the key segment, and producing the hash value for the target segment based on a pattern image in the query region.
