Sk hynix inc. (20240179918). THREE-DIMENSIONAL SEMICONDUCTOR DEVICE HAVING A SUPPORT PATTERN IN CONTACT WITH A SIDE SURFACE OF A CONTACT PLUG simplified abstract
Contents
- 1 THREE-DIMENSIONAL SEMICONDUCTOR DEVICE HAVING A SUPPORT PATTERN IN CONTACT WITH A SIDE SURFACE OF A CONTACT PLUG
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 THREE-DIMENSIONAL SEMICONDUCTOR DEVICE HAVING A SUPPORT PATTERN IN CONTACT WITH A SIDE SURFACE OF A CONTACT PLUG - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
THREE-DIMENSIONAL SEMICONDUCTOR DEVICE HAVING A SUPPORT PATTERN IN CONTACT WITH A SIDE SURFACE OF A CONTACT PLUG
Organization Name
Inventor(s)
Jae Taek Kim of Icheon-si (KR)
Hye Yeong Jung of Icheon-si (KR)
THREE-DIMENSIONAL SEMICONDUCTOR DEVICE HAVING A SUPPORT PATTERN IN CONTACT WITH A SIDE SURFACE OF A CONTACT PLUG - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240179918 titled 'THREE-DIMENSIONAL SEMICONDUCTOR DEVICE HAVING A SUPPORT PATTERN IN CONTACT WITH A SIDE SURFACE OF A CONTACT PLUG
Simplified Explanation
The semiconductor device described in the abstract includes various components such as a substrate, transistor, logic interconnection, insulating layers, conductive layers, support patterns, via plugs, word line stack, dielectric layer stack, channel pillar, and via plugs.
- The semiconductor device has a substrate with a cell area and a via area.
- A transistor and logic interconnection are placed over the substrate.
- A lower insulating layer covers the transistor and logic interconnection.
- A lower conductive layer is present on the lower insulating layer in the cell area.
- A support pattern is located on the lower insulating layer in the via area.
- A lower via plug connects the support pattern and the logic interconnection.
- A word line stack is positioned on the lower conductive layer in the cell area.
- A dielectric layer stack is placed on the support pattern in the via area.
- A vertical channel pillar penetrates the word line stack to connect to the lower conductive layer.
- An upper via plug goes through the dielectric layer stack to align vertically with the lower via plug.
Potential Applications
The technology described in this patent application could be applied in the development of advanced semiconductor devices for various electronic applications, such as mobile devices, computers, and communication systems.
Problems Solved
This technology addresses the need for improved vertical interconnection structures in semiconductor devices, allowing for enhanced performance and efficiency in electronic circuits.
Benefits
The use of vertical channel pillars and via plugs in this semiconductor device design can lead to increased packing density, reduced power consumption, and improved signal transmission speed.
Potential Commercial Applications
- "Innovative Vertical Interconnection Structures for Advanced Semiconductor Devices"
Possible Prior Art
There may be prior art related to vertical interconnection structures in semiconductor devices, but specific examples are not provided in this patent application.
Unanswered Questions
How does this technology compare to existing vertical interconnection structures in semiconductor devices?
This article does not provide a direct comparison with existing vertical interconnection structures in semiconductor devices.
What are the potential challenges in implementing this technology on a large scale in semiconductor manufacturing processes?
The article does not address the potential challenges in implementing this technology on a large scale in semiconductor manufacturing processes.
Original Abstract Submitted
the semiconductor device includes a substrate having a cell area and a via area; a transistor and a logic interconnection disposed over the substrate; a lower insulating layer covering the transistor and the logic interconnection; a lower conductive layer on the lower insulating layer in the cell area; a support pattern disposed on the lower insulating layer in the via area; a lower via plug having a side surface in contact with the support pattern and a bottom surface in contact with the logic interconnection; a word line stack disposed on the lower conductive layer in the cell area; an dielectric layer stack disposed on the support pattern in the via area; a vertical channel pillar penetrating the word line stack to be connected to the lower conductive layer; and an upper via plug penetrating the dielectric layer stack to be vertically aligned with the lower via plug.
