SELECTIVE PRECISION ETCHING OF SEMICONDUCTOR MATERIALS

Abstract: various embodiments described herein relate to methods and apparatus for etching a semiconductor substrate to remove a target material from a surface of the substrate. generally, the techniques described herein are thermal techniques that do not rely on the use of plasma. in a number of embodiments, a particular gas mixture is provided to the reaction chamber to react with the target material. the gas mixture may include a combination of a halogen source such as hydrogen fluoride (hf), an organic solvent and/or water, an additive, and a carrier gas. a number of different materials may be used for the organic solvent and/or for the additive. the additive may act to form a complex with hf or another halogen source.

Inventor(s): Madeleine Parker GORDON, Nathan MUSSELWHITE, Mark Naoshi KAWAGUCHI

CPC Classification: H01L21/31116 ({by dry-etching})

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