Jump to content

20250180640. Plasma Induced Damage (Micron Technology, .)

From WikiPatents
Revision as of 04:16, 11 June 2025 by Wikipatents (talk | contribs) (Automated patent report)
(diff) ← Older revision | Latest revision (diff) | Newer revision → (diff)

PLASMA INDUCED DAMAGE DETECTION OF A MEMORY DIE

Abstract: methods, systems, and devices for techniques for coupled host and memory dies are described. in some examples, a device may include a memory die coupled with a substrate. further, the device may include a die seal structure surrounding the memory die and coupled with the substrate. in some examples, the die seal may include multiple layers and the device may include an insulative material coupled with at least one layer of the multiples layers and a conductive material coupled with the insulative material. additionally, the device may include a sensing circuit coupled with the conductive material. in some examples, the sensing circuit may be configured to generate a signal based on a charge accumulated in the conductive material.

Inventor(s): Aryo Santosa, Ivo T. Wambeke, James E. Davis, Joshua D. Tomayer, Chiara Cerafogli, Kenneth W. Marr

CPC Classification: G01R31/2896 ({Testing of IC packages; Test features related to IC packages (containers per se , encapsulations per se )})

Search for rejections for patent application number 20250180640


Cookies help us deliver our services. By using our services, you agree to our use of cookies.