18423895. Light-Emitting Device, Metal Complex, Light-Emitting Apparatus, Electronic Apparatus, And Lighting Device simplified abstract (SEMICONDUCTOR ENERGY LABORATORY CO., LTD.)
Contents
- 1 Light-Emitting Device, Metal Complex, Light-Emitting Apparatus, Electronic Apparatus, And Lighting Device
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Light-Emitting Device, Metal Complex, Light-Emitting Apparatus, Electronic Apparatus, And Lighting Device - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
Light-Emitting Device, Metal Complex, Light-Emitting Apparatus, Electronic Apparatus, And Lighting Device
Organization Name
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor(s)
Takeyoshi Watabe of Atsugi (JP)
Satoshi Seo of Sagamihara (JP)
Light-Emitting Device, Metal Complex, Light-Emitting Apparatus, Electronic Apparatus, And Lighting Device - A simplified explanation of the abstract
This abstract first appeared for US patent application 18423895 titled 'Light-Emitting Device, Metal Complex, Light-Emitting Apparatus, Electronic Apparatus, And Lighting Device
Simplified Explanation
The abstract describes a light-emitting device with high emission efficiency, including an anode, a cathode, and an EL layer with a light-emitting layer and an electron-transport layer.
- The EL layer of the device includes a light-emitting material and an organic compound with electron-transport properties.
- The electron-transport layer also contains a metal complex of an alkali metal.
- The refractive indices of the organic compound and metal complex are specified within certain ranges for optimal performance.
Potential Applications
The technology described in this patent application could be used in various lighting applications, such as OLED displays, lighting panels, and signage.
Problems Solved
This innovation addresses the challenge of achieving high emission efficiency in light-emitting devices, which is crucial for improving the performance and energy efficiency of lighting systems.
Benefits
The benefits of this technology include enhanced emission efficiency, improved brightness and color accuracy, and potentially lower energy consumption compared to traditional lighting solutions.
Potential Commercial Applications
The technology has potential commercial applications in the consumer electronics industry, automotive lighting, and general lighting applications for residential and commercial buildings.
Possible Prior Art
One possible prior art could be the development of organic light-emitting diodes (OLEDs) with different material compositions and structures to improve efficiency and performance.
Unanswered Questions
How does this technology compare to existing OLED technologies in terms of efficiency and performance?
This article does not provide a direct comparison with existing OLED technologies in terms of efficiency and performance. Further research or comparative studies may be needed to address this question.
What are the potential challenges in scaling up the production of light-emitting devices using this technology for commercial applications?
The article does not discuss the potential challenges in scaling up production for commercial applications. Factors such as cost, scalability, and manufacturing processes could be important considerations in the commercialization of this technology.
Original Abstract Submitted
A light-emitting device with high emission efficiency is provided. The light-emitting device includes an anode, a cathode, and an EL layer positioned between the anode and the cathode. The EL layer includes a light-emitting layer and an electron-transport layer; the light-emitting layer includes a light-emitting material; the electron-transport layer includes an organic compound having an electron-transport property and a metal complex of an alkali metal; the ordinary refractive index of the organic compound having an electron-transport property in a peak wavelength of light emitted from the light-emitting material is greater than or equal to 1.50 and less than or equal to 1.75; and the ordinary refractive index of the metal complex of an alkali metal in the peak wavelength of the light emitted from the light-emitting material is greater than or equal to 1.45 and less than or equal to 1.70.
- SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Yuta Kawano of Yokohama (JP)
- Airi Ueda of Sagamihara (JP)
- Takeyoshi Watabe of Atsugi (JP)
- Nobuharu Ohsawa of Zama (JP)
- Keito Tosu of Isehara (JP)
- Harue Osaka of Atsugi (JP)
- Satoshi Seo of Sagamihara (JP)
- Ryo Narukawa of Hadano (JP)
- Shiho Nomura of Atsugi (JP)
- H10K50/16
- H10K59/00
- H10K59/12