18318480. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Ji Seong Kim of Icheon-si Gyeonggi-do (KR)
Yoon Ho Kang of Icheon-si Gyeonggi-do (KR)
Wan Sup Shin of Icheon-si Gyeonggi-do (KR)
Seok Min Jeon of Icheon-si Gyeonggi-do (KR)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18318480 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes a gate structure with conductive and insulating layers stacked alternately, a contact plug extending through the gate structure in the stacking direction of the insulating layers, first spacer layers between the conductive layer and the contact plug, and second spacer layers between the contact plug and the first spacer layer.
- Gate structure with conductive and insulating layers stacked alternately
- Contact plug extending through the gate structure in the stacking direction of the insulating layers
- First spacer layers between the conductive layer and the contact plug
- Second spacer layers between the contact plug and the first spacer layer
Potential Applications
This technology could be applied in the manufacturing of advanced semiconductor devices, such as high-performance transistors for electronic devices.
Problems Solved
This technology helps in improving the performance and efficiency of semiconductor devices by enhancing the contact between different layers within the device.
Benefits
The benefits of this technology include increased conductivity, reduced resistance, and improved overall functionality of semiconductor devices.
Potential Commercial Applications
A potential commercial application of this technology could be in the production of faster and more efficient computer processors for various electronic devices.
Possible Prior Art
One possible prior art for this technology could be the use of spacer layers in semiconductor devices to improve the contact between different components within the device.
Unanswered Questions
How does this technology compare to existing semiconductor device structures in terms of performance and efficiency?
This article does not provide a direct comparison with existing semiconductor device structures to evaluate the performance and efficiency differences.
What are the specific manufacturing processes involved in creating the gate structure and spacer layers described in the patent application?
The article does not delve into the detailed manufacturing processes involved in creating the gate structure and spacer layers, leaving a gap in understanding the practical implementation of the technology.
Original Abstract Submitted
A semiconductor device including: a gate structure in which conductive layers and insulating layers are alternately stacked; contact plug extending in a stacking direction of the insulating layers through the gate structure; first spacer layers each located between the conductive layer and the contact plug; and second spacer layers each located between the contact plug and the first spacer layer.
