18390171. SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE simplified abstract (SK hynix Inc.)
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Nam Jae Lee of Icheon-si Gyeonggi-do (KR)
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18390171 titled 'SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE
Simplified Explanation
The semiconductor memory device described in the abstract includes various layers and structures such as source structure, stacked conductive layer, select conductive layers, insulating layers, and separation insulating structure.
- Source structure
- Stacked conductive layer
- First and second select conductive layers
- Stacked insulating layer
- Separation insulating structure
- Potential Applications:**
The technology described in the patent application could be used in various electronic devices such as smartphones, tablets, laptops, and other computing devices that require high-speed and reliable memory storage.
- Problems Solved:**
This technology helps in improving the performance and efficiency of semiconductor memory devices by providing a structure that allows for faster data access and storage capabilities.
- Benefits:**
- Improved performance of semiconductor memory devices - Enhanced data access and storage capabilities - Increased efficiency in electronic devices
- Potential Commercial Applications:**
- Optimizing Semiconductor Memory Devices for Enhanced Performance*
- Possible Prior Art:**
One possible prior art related to this technology could be the use of stacked insulating layers in semiconductor memory devices to improve data storage and access speeds.
- Unanswered Questions:**
1. What specific materials are used in the fabrication of the stacked conductive layer in the semiconductor memory device? 2. How does the separation insulating structure contribute to the overall performance of the memory device?
Original Abstract Submitted
Provided herein may be a semiconductor memory device and a method of manufacturing the semiconductor memory device. The semiconductor memory device includes a source structure, a stacked conductive layer that overlaps with the source structure, a first select conductive layer and a second select conductive layer disposed between the source structure and the stacked conductive layer, a stacked insulating layer disposed between the first and second select conductive layers and the stacked conductive layer, and a separation insulating structure provided between the first select conductive layer and the second select conductive layer.
