18317670. MEMORY DEVICE AND METHOD OF OPERATING THE SAME simplified abstract (SK hynix Inc.)
Contents
- 1 MEMORY DEVICE AND METHOD OF OPERATING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MEMORY DEVICE AND METHOD OF OPERATING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
MEMORY DEVICE AND METHOD OF OPERATING THE SAME
Organization Name
Inventor(s)
Seung Geun Jeong of Icheon-si Gyeonggi-do (KR)
MEMORY DEVICE AND METHOD OF OPERATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18317670 titled 'MEMORY DEVICE AND METHOD OF OPERATING THE SAME
Simplified Explanation
The present technology involves a memory device and a method of operating the same, where the memory device includes various components such as memory block, page buffers, current measurer, and logic circuit to control the operation of the memory device.
- Memory device with memory block, page buffers, current measurer, and logic circuit.
- Page buffers apply program allowable voltage or program inhibit voltage to bit lines.
- Current measurer outputs total current value of bit lines based on sensing voltage.
- Logic circuit controls voltage generator and page buffers to calculate number of inhibit cells and perform verify operation accordingly.
Potential Applications
The technology can be applied in various electronic devices such as smartphones, tablets, laptops, and servers to improve memory operations and efficiency.
Problems Solved
1. Enhanced memory operation efficiency. 2. Reduced power consumption during memory operations.
Benefits
1. Improved memory performance. 2. Lower power consumption. 3. Enhanced overall device efficiency.
Potential Commercial Applications
Optimizing memory operations in smartphones for faster data access and improved user experience.
Possible Prior Art
One possible prior art could be memory devices with similar components but lacking the specific logic circuit for controlling the operation based on the number of inhibit cells.
Unanswered Questions
How does this technology compare to existing memory devices in terms of speed and efficiency?
The article does not provide a direct comparison with existing memory devices in terms of speed and efficiency.
What are the potential limitations or drawbacks of implementing this technology in practical applications?
The article does not address any potential limitations or drawbacks of implementing this technology in practical applications.
Original Abstract Submitted
The present technology includes a memory device and a method of operating the same. The memory device includes a memory block, page buffers connected to memory cells through bit lines and configured to apply a program allowable voltage or a program inhibit voltage to the bit lines, a current measurer configured to output a total current value of the bit lines according to a sensing voltage measured from the bit lines, and a logic circuit configured to control the voltage generator and the page buffers to calculate the number of inhibit cells according to the total current value and omit a verify operation of a program loop or perform the verify operation of the program loop according to the number of the inhibit cells.
