18323306. MEMORY DEVICE AND METHOD OF OPERATING THE MEMORY DEVICE simplified abstract (SK hynix Inc.)

MEMORY DEVICE AND METHOD OF OPERATING THE MEMORY DEVICE

Organization Name

SK hynix Inc.

Inventor(s)

Hye Eun Heo of Icheon-si Gyeonggi-do (KR)

Hyun Seung Yoo of Icheon-si Gyeonggi-do (KR)

MEMORY DEVICE AND METHOD OF OPERATING THE MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18323306 titled 'MEMORY DEVICE AND METHOD OF OPERATING THE MEMORY DEVICE

Simplified Explanation

The present technology includes a memory device and a method of operating the same. The memory device includes a string with a first select transistor, memory cells, and a second select transistor connected between a source line and a bit line. A voltage generator is configured to supply a precharge voltage to the source line and selectively apply a turn-on voltage or a negative voltage to a first select line connected to a gate of the first select transistor. The voltage generator applies the precharge voltage to the source line, the turn-on voltage to the first select line during a first time when the channel layer of the string is precharged, and the negative voltage to the first select line during a second time when the channel layer of the string is precharged, while precharging the channel layer of the string.

• Memory device with first select transistor, memory cells, and second select transistor
• Voltage generator supplying precharge voltage and selectively applying turn-on or negative voltage to first select line
• Precharging channel layer of string during different times with corresponding voltages

Potential Applications

The technology can be used in various memory devices such as flash drives, solid-state drives, and other storage devices.

Problems Solved

1. Efficient operation of memory devices 2. Improved performance and reliability of memory cells

Benefits

1. Faster data access and transfer speeds 2. Enhanced data storage capacity 3. Reduced power consumption

Potential Commercial Applications

Optimizing memory devices for consumer electronics, data centers, and cloud computing services.

Possible Prior Art

Prior art may include patents related to memory device structures and methods of operation, particularly those involving precharge voltages and selective application of voltages to control transistor gates.

How does this technology compare to existing memory device technologies in terms of speed and efficiency?

The article does not provide a direct comparison with existing memory device technologies to evaluate the speed and efficiency improvements offered by this innovation.

What are the potential challenges or limitations of implementing this technology in practical memory devices?

The article does not address the potential challenges or limitations that may arise when implementing this technology in real-world memory devices, such as manufacturing costs or compatibility issues.

Original Abstract Submitted

The present technology includes a memory device and a method of operating the same. The memory device includes a string including a first select transistor, memory cells, and a second select transistor connected between a source line and a bit line, and a voltage generator configured to supply a precharge voltage to the source line and selectively apply a turn on voltage or a negative voltage to a first select line connected to a gate of the first select transistor. The voltage generator is configured to apply the precharge voltage to the source line, apply the turn on voltage to the first select line during a first time in which a channel layer of the string is precharged, and apply the negative voltage to the first select line during a second time in which the channel layer of the string is precharged, while precharging the channel layer of the string.