18300958. MEMORY DEVICE FOR PERFORMING FOGGY-FINE PROGRAM OPERATION AND METHOD OF OPERATING THE MEMORY DEVICE simplified abstract (SK hynix Inc.)

MEMORY DEVICE FOR PERFORMING FOGGY-FINE PROGRAM OPERATION AND METHOD OF OPERATING THE MEMORY DEVICE

Organization Name

SK hynix Inc.

Inventor(s)

Jae Yeop Jung of Icheon-si Gyeonggi-do (KR)

Dong Hun Kwak of Icheon-si Gyeonggi-do (KR)

Yeong Jo Mun of Icheon-si Gyeonggi-do (KR)

Hyun Seob Shin of Icheon-si Gyeonggi-do (KR)

MEMORY DEVICE FOR PERFORMING FOGGY-FINE PROGRAM OPERATION AND METHOD OF OPERATING THE MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18300958 titled 'MEMORY DEVICE FOR PERFORMING FOGGY-FINE PROGRAM OPERATION AND METHOD OF OPERATING THE MEMORY DEVICE

Simplified Explanation

The memory device described in the abstract is designed to perform foggy-fine program operations on memory cells, utilizing control logic to control the peripheral circuit during the program operation.

• Memory device for foggy-fine program operation:

   * Includes a memory block with multiple memory cells
   * Peripheral circuit performs program operations on selected memory cells
   * Control logic manages program operation by the peripheral circuit
   * Foggy program operation on first memory cells connected to a first word line
   * Foggy program operation on second memory cells connected to a second word line adjacent to the first word line
   * Fine program operation on the first memory cells by reducing verify pass voltage on the second word line

Potential Applications

The technology could be applied in: - Flash memory devices - Solid-state drives - Embedded systems

Problems Solved

- Enhancing program operations on memory cells - Improving efficiency and accuracy of programming - Reducing power consumption during program operations

Benefits

- Increased reliability of memory devices - Higher performance in data storage and retrieval - Extended lifespan of memory cells

Potential Commercial Applications

Optimizing memory devices for various industries: - Consumer electronics - Automotive systems - Medical devices

Possible Prior Art

One possible prior art could be the use of multi-level cell (MLC) technology in memory devices to increase storage capacity and efficiency.

How does this technology compare to traditional memory programming methods?

This article does not provide a direct comparison between the foggy-fine program operation and traditional memory programming techniques. It would be helpful to understand the specific advantages and disadvantages of this new approach in relation to existing methods.

What impact does the foggy-fine program operation have on overall memory device performance?

The article does not delve into the overall performance implications of implementing foggy-fine program operations in memory devices. It would be beneficial to explore how this technology affects speed, reliability, and durability of the memory device.

Original Abstract Submitted

Provided herein is a memory device for performing a foggy-fine program operation and a method of operating the memory device. The memory device includes a memory block including a plurality of memory cells, a peripheral circuit configured to perform a program operation on selected memory cells among the plurality of cells, and a control logic configured to control the program operation by the peripheral circuit. The control logic is configured to control the peripheral circuit to perform a foggy program operation on first memory cells coupled to a first word line, among the plurality of memory cells, perform a foggy program operation on second memory cells coupled to a second word line adjacent to the first word line, among the memory cells, and perform a fine program operation on the first memory cells by decreasing a verify pass voltage to be applied to the second word line.