18375858. CHANNEL DEPOPULATION FOR FORKSHEET TRANSISTORS simplified abstract (Intel Corporation)

CHANNEL DEPOPULATION FOR FORKSHEET TRANSISTORS

Organization Name

Intel Corporation

Inventor(s)

Peng Zheng of Portland OR (US)

Varun Mishra of Hillsboro OR (US)

Harold W. Kennel of Portland OR (US)

Eric A. Karl of Portland OR (US)

Tahir Ghani of Portland OR (US)

CHANNEL DEPOPULATION FOR FORKSHEET TRANSISTORS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18375858 titled 'CHANNEL DEPOPULATION FOR FORKSHEET TRANSISTORS

Simplified Explanation

The patent application describes transistor devices with depopulated channels, where a first transistor device includes a first vertical stack of semiconductor channels adjacent to a first edge of a backbone, and a second transistor device includes a second vertical stack of semiconductor channels adjacent to a second edge of the backbone.

• The first transistor device has a first vertical stack of semiconductor channels with varying dopant concentrations, including first semiconductor channels and a second semiconductor channel with different dopant concentrations.
• The second transistor device has a second vertical stack of semiconductor channels adjacent to the opposite edge of the backbone.

Potential Applications

The technology described in the patent application could be applied in the development of high-performance integrated circuits, particularly in the field of semiconductor devices.

Problems Solved

This technology addresses the challenge of optimizing the performance and efficiency of transistor devices by utilizing depopulated channels with varying dopant concentrations.

Benefits

The use of depopulated channels with different dopant concentrations can improve the overall performance, speed, and power efficiency of transistor devices.

Potential Commercial Applications

The technology could have potential commercial applications in the semiconductor industry for the production of advanced integrated circuits with enhanced performance capabilities.

Possible Prior Art

One possible prior art could be the use of vertical stack structures in semiconductor devices to improve performance and efficiency.

How does the technology impact the overall power consumption of integrated circuits?

The patent application does not specifically address the impact of depopulated channels with varying dopant concentrations on the power consumption of integrated circuits. Further research and testing would be needed to determine the exact effects on power efficiency.

What are the potential scalability limitations of this technology in mass production?

The patent application does not discuss the scalability limitations of implementing depopulated channels with varying dopant concentrations in mass production of integrated circuits. Additional studies and experiments would be required to assess the scalability of this technology for commercial manufacturing processes.

Original Abstract Submitted

Embodiments disclosed herein include forksheet transistor devices with depopulated channels. In an example, an integrated circuit structure includes a backbone. A first transistor device includes a first vertical stack of semiconductor channels adjacent to a first edge of the backbone. The first vertical stack of semiconductor channels includes first semiconductor channels and a second semiconductor channel over or beneath the first semiconductor channels. A concentration of a dopant in the first semiconductor channels is less than a concentration of the dopant in the second semiconductor channel. A second transistor device includes a second vertical stack of semiconductor channels adjacent to a second edge of the backbone opposite the first edge.