18399885. SOURCE/DRAIN REGIONS IN INTEGRATED CIRCUIT STRUCTURES simplified abstract (Intel Corporation)
Contents
- 1 SOURCE/DRAIN REGIONS IN INTEGRATED CIRCUIT STRUCTURES
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SOURCE/DRAIN REGIONS IN INTEGRATED CIRCUIT STRUCTURES - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SOURCE/DRAIN REGIONS IN INTEGRATED CIRCUIT STRUCTURES
Organization Name
Inventor(s)
Sean T. Ma of Portland OR (US)
Andy Chih-Hung Wei of Yamhill OR (US)
Guillaume Bouche of Portland OR (US)
SOURCE/DRAIN REGIONS IN INTEGRATED CIRCUIT STRUCTURES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18399885 titled 'SOURCE/DRAIN REGIONS IN INTEGRATED CIRCUIT STRUCTURES
Simplified Explanation
The abstract describes an integrated circuit structure with source/drain regions and insulating material regions between them.
- Integrated circuit structure with source/drain regions:
* Includes an array of channel regions with first and second channel regions. * First source/drain region is near the first channel region. * Second source/drain region is near the second channel region. * Insulating material region partially separates the first and second source/drain regions.
Potential Applications
The technology described in this patent application could be applied in the semiconductor industry for the development of advanced integrated circuits with improved performance and reliability.
Problems Solved
1. Enhanced performance: By optimizing the placement of source/drain regions and insulating material, the efficiency and speed of the integrated circuit can be improved. 2. Reduced interference: The insulating material region helps in reducing interference between the source/drain regions, leading to better overall circuit performance.
Benefits
1. Improved circuit efficiency: The optimized structure allows for better control of current flow, leading to enhanced efficiency. 2. Enhanced reliability: By reducing interference and optimizing the layout, the circuit's reliability and longevity can be improved.
Potential Commercial Applications
Optimizing source/drain regions in integrated circuits can have applications in various industries such as consumer electronics, telecommunications, and automotive for developing high-performance devices.
Possible Prior Art
Prior art in the field of semiconductor technology may include patents or publications related to optimizing source/drain regions in integrated circuits, insulating material placement, and improving circuit performance through layout design.
Unanswered Questions
How does the insulating material region impact the overall performance of the integrated circuit?
The abstract mentions an insulating material region between the source/drain regions, but it does not elaborate on how this feature specifically affects the circuit's performance.
What specific materials are used for the source/drain regions and insulating material in this integrated circuit structure?
The abstract provides a general overview of the structure but does not detail the materials used for the source/drain regions and insulating material, which could be crucial for understanding the technology's implementation.
Original Abstract Submitted
Disclosed herein are source/drain regions in integrated circuit (IC) structures, as well as related methods and components. For example, in some embodiments, an IC structure may include: an array of channel regions, including a first channel region and an adjacent second channel region; a first source/drain region proximate to the first channel region; a second source/drain region proximate to the second channel region; and an insulating material region at least partially between the first source/drain region and the second source/drain region.
