18173815. RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH IMPROVED BOTTOM ELECTRODE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH IMPROVED BOTTOM ELECTRODE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH IMPROVED BOTTOM ELECTRODE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH IMPROVED BOTTOM ELECTRODE
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Jheng-Hong Jiang of Hsinchu (TW)
Chung-Liang Cheng of Changhua County (TW)
RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH IMPROVED BOTTOM ELECTRODE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18173815 titled 'RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH IMPROVED BOTTOM ELECTRODE
Simplified Explanation
The abstract describes a resistive random access memory (RRAM) device with a unique structure and configuration.
- The RRAM device includes a bottom electrode via in a first dielectric layer.
- The bottom electrode is connected to the bottom electrode via and protrudes upwardly in a tapered shape.
- A top electrode is located in a second dielectric layer, vertically aligned with the bottom electrode.
- A switching layer between the dielectric layers encloses the bottom electrode, forming a conductive path when a forming voltage is applied.
Potential Applications
The RRAM device can be used in various electronic devices such as smartphones, tablets, and computers for non-volatile memory storage.
Problems Solved
This technology provides a more efficient and reliable memory storage solution compared to traditional methods.
Benefits
The RRAM device offers faster read and write speeds, lower power consumption, and higher data retention capabilities.
Potential Commercial Applications
The RRAM technology can be utilized in the semiconductor industry for the development of next-generation memory devices.
Possible Prior Art
Prior art in resistive memory technology includes studies on memristors and other non-volatile memory devices.
Unanswered Questions
How does the RRAM device perform under extreme temperature conditions?
The article does not address the device's performance in extreme temperature environments.
What is the expected lifespan of the RRAM device compared to other memory technologies?
The article does not provide information on the expected lifespan of the RRAM device in comparison to existing memory technologies.
Original Abstract Submitted
A resistive random access memory (RRAM) device is provided. The RRAM includes: a bottom electrode via disposed in a first dielectric layer; a bottom electrode electrically connected to the bottom electrode via and protruding upwardly from the bottom electrode via in a vertical direction, wherein the bottom electrode has a tapered shape and includes a base portion extending upwardly from a bottom surface to an interface and a tip portion extending upwardly from the interface to a top surface; a top electrode disposed in a second dielectric layer, the top electrode distanced above and vertically aligned with the bottom electrode; and a switching layer disposed between the first dielectric layer and the second dielectric layer, the switching layer enclosing the bottom electrode, wherein a conductive path between the bottom electrode and the top electrode is formed when a forming voltage is applied.
