18180698. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Ming-Heng Tsai of Taipei City (TW)

Chun-Sheng Liang of Changhua County (TW)

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18180698 titled 'SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

Simplified Explanation

The semiconductor structure described in the patent application includes a first stack structure with first nanostructures, a second stack structure with second nanostructures, and a dielectric wall between the two stack structures. The first portion of the isolation structure is lower than the second portion, with the dielectric wall directly over the first portion.

• First stack structure with first nanostructures
• Second stack structure with second nanostructures
• Dielectric wall separating the two stack structures
• Isolation structure with different height portions

Potential Applications

The technology described in the patent application could be applied in:

• Semiconductor manufacturing
• Nanotechnology research

Problems Solved

This technology helps in:

• Improving semiconductor structure design
• Enhancing isolation between stack structures

Benefits

The benefits of this technology include:

• Increased efficiency in semiconductor devices
• Better performance of nanostructures

Potential Commercial Applications

This technology could be used in:

• Electronics industry
• Semiconductor fabrication companies

Possible Prior Art

One possible prior art could be:

• Previous semiconductor structures with similar isolation techniques

What are the specific materials used in the manufacturing process of these semiconductor structures?

The specific materials used in the manufacturing process of these semiconductor structures are not mentioned in the abstract. Further details about the materials and their properties would be needed to fully understand the manufacturing process.

How does the presence of the dielectric wall impact the overall performance of the semiconductor structure?

The abstract does not provide information on how the presence of the dielectric wall impacts the overall performance of the semiconductor structure. Further research or detailed description of the technology would be required to answer this question accurately.

Original Abstract Submitted

Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes a first stack structure extends above the isolation structure, and the first stack structure includes a plurality of first nanostructures along a first direction. The semiconductor structure also includes a second stack structure formed adjacent to the first stack structure, and the second stack structure includes a plurality of second nanostructures along the first direction. A first dielectric wall between the first stack structure and the second stack structure, and the first dielectric wall is directly over a first portion of the isolation structure and surrounded by a second portion of the isolation structure, and a top surface of the first portion of the isolation structure is lower than a top surface of the second portion of the isolation structure.