18172877. SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Huang-Chao Chang of Hsinchu (TW)
Chun-Sheng Liang of Hsinchu (TW)
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18172877 titled 'SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
Simplified Explanation
The semiconductor structure described in the abstract includes a dielectric wall with two device units formed on its side surfaces. Each device unit consists of channel features, a gate feature, and a dielectric filler unit with first dielectric fillers between the dielectric wall and the channel features.
- Dielectric wall with two device units:
- Dielectric wall with two side surfaces - Device units formed on side surfaces
- Device units components:
- Channel features on side surfaces - Gate feature around channel features - Dielectric filler unit with first dielectric fillers
- First dielectric fillers:
- Greater dielectric constant than dielectric wall - Between dielectric wall and channel features
Potential Applications
The technology described in this patent application could be applied in the development of advanced semiconductor devices, such as transistors and integrated circuits.
Problems Solved
This technology helps in improving the performance and efficiency of semiconductor devices by providing a structure with enhanced dielectric properties and reduced parasitic capacitance.
Benefits
The benefits of this technology include increased speed, reduced power consumption, and improved overall functionality of semiconductor devices.
Potential Commercial Applications
- Enhancing the performance of electronic devices
- Improving the efficiency of integrated circuits
Possible Prior Art
There may be prior art related to semiconductor structures with dielectric fillers, but specific examples are not provided in the abstract.
Unanswered Questions
How does this technology compare to existing semiconductor structures with dielectric fillers?
The article does not provide a direct comparison between this technology and existing semiconductor structures with dielectric fillers.
What specific manufacturing processes are required to implement this semiconductor structure?
The article does not detail the specific manufacturing processes needed to implement this semiconductor structure.
Original Abstract Submitted
A semiconductor structure includes a substrate, a dielectric wall, and two device units. The dielectric wall has two side surfaces opposite to each other. The two device units are respectively formed at the two side surfaces of the dielectric wall. Each of the device units includes channel features, a gate feature and a dielectric filler unit. The channel features are disposed on a corresponding one of the side surfaces of the dielectric wall, and spaced apart from each other. The gate feature is formed around the channel features and disposed on the corresponding one of the side surfaces of the dielectric wall. The dielectric filler unit includes a plurality of first dielectric fillers, each of which is disposed between the dielectric wall and a corresponding one of the channel features. The first dielectric fillers have a dielectric constant greater than that of the dielectric wall.
