18180589. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Wen-Chiang Hong of Taipei City (TW)
Chih-Hao Chang of Chu-Bei City (TW)
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18180589 titled 'SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
Simplified Explanation
The semiconductor structure described in the patent application includes a gate structure, a first source/drain (S/D) structure, a first contact structure, and a second contact structure. The first contact structure is formed over a first side of the first S/D structure, with a portion of it lower than the top surface of the first S/D structure. The second contact structure is formed over a second side of the first S/D structure and is in direct contact with the first contact structure.
- Gate structure formed over a substrate
- First source/drain (S/D) structure adjacent to the gate structure
- First contact structure over a first side of the first S/D structure, with a portion lower than the top surface of the first S/D structure
- Second contact structure over a second side of the first S/D structure, in direct contact with the first contact structure
Potential Applications
This technology could be applied in:
- Semiconductor manufacturing
- Integrated circuits
- Electronic devices
Problems Solved
This technology helps in:
- Improving contact structures in semiconductor devices
- Enhancing performance and reliability of electronic components
Benefits
The benefits of this technology include:
- Better electrical contact between components
- Increased efficiency and performance of semiconductor structures
- Improved overall reliability of electronic devices
Potential Commercial Applications
Potential commercial applications of this technology could include:
- Semiconductor industry
- Electronics manufacturing companies
- Research and development firms
Possible Prior Art
One possible prior art could be the use of similar contact structures in semiconductor devices to improve performance and reliability.
Unanswered Questions
How does this technology compare to existing contact structures in terms of performance and reliability?
This article does not provide a direct comparison with existing contact structures in semiconductor devices.
What specific manufacturing processes are involved in creating the first and second contact structures in this semiconductor structure?
The article does not delve into the specific manufacturing processes used to create the contact structures mentioned.
Original Abstract Submitted
Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes a gate structure formed over a substrate, and a first source/drain (S/D) structure formed adjacent to the gate structure. The semiconductor structure includes a first contact structure formed over a first side of the first S/D structure, and a portion of the first contact structure is lower than a top surface of the first S/D structure. The semiconductor structure includes a second contact structure formed over a second side of the first S/D structure, and the second contact structure is in direct contact with the first contact structure.
