18107658. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Pin Chun Shen of Changhua (TW)

Che Chia Chang of Hsinchu (TW)

Li-Ying Wu of Hsinchu (TW)

Jen-Hsiang Lu of Taipei (TW)

Wen-Chiang Hong of Taipei (TW)

Chun-Wing Yeung of Hsinchu (TW)

Ta-Chun Lin of Hsinchu (TW)

Chun-Sheng Liang of Changhua (TW)

Shih-Hsun Chang of Hsinchu (TW)

Chih-Hao Chang of Hsinchu (TW)

Yi-Hsien Chen of Hsinchu (TW)

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18107658 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREOF

Simplified Explanation

The present disclosure describes a semiconductor structure with a source/drain feature that includes a central cavity, and a source/drain contact feature formed within the central cavity of the source/drain region. The source/drain contact feature is surrounded by the source/drain region and may extend to the lowermost of a plurality of semiconductor layers.

• The semiconductor structure includes a source/drain feature with a central cavity.
• A source/drain contact feature is formed within the central cavity of the source/drain region.
• The source/drain contact feature is nearly wrapped around by the source/drain region.
• The source/drain contact feature may extend to the lowermost of a plurality of semiconductor layers.

Potential Applications

This technology could be applied in:

• Semiconductor manufacturing
• Integrated circuits
• Electronic devices

Problems Solved

This technology helps in:

• Improving contact resistance
• Enhancing semiconductor device performance
• Increasing integration density

Benefits

The benefits of this technology include:

• Better electrical contact between components
• Higher efficiency in semiconductor devices
• Improved overall device performance

Potential Commercial Applications

The potential commercial applications of this technology could be in:

• Consumer electronics
• Telecommunications
• Automotive industry

Possible Prior Art

One possible prior art for this technology could be:

• Semiconductor structures with source/drain features but without central cavities.

Unanswered Questions

How does this technology impact power consumption in electronic devices?

This article does not address the specific impact of this technology on power consumption in electronic devices.

What are the potential challenges in scaling up this technology for mass production?

The article does not discuss the potential challenges in scaling up this technology for mass production and commercialization.

Original Abstract Submitted

The present disclosure provides a semiconductor structure with having a source/drain feature with a central cavity, and a source/drain contact feature formed in central cavity of the source/drain region, wherein the source/drain contact feature is nearly wrapped around by the source/drain region. The source/drain contact feature may extend to a lower most of a plurality semiconductor layers.