18418678. Gate Structures in Transistors and Method of Forming Same simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 Gate Structures in Transistors and Method of Forming Same
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Gate Structures in Transistors and Method of Forming Same - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
Gate Structures in Transistors and Method of Forming Same
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Cheng-Lung Hung of Hsinchu (TW)
Gate Structures in Transistors and Method of Forming Same - A simplified explanation of the abstract
This abstract first appeared for US patent application 18418678 titled 'Gate Structures in Transistors and Method of Forming Same
Simplified Explanation
The patent application describes a device with two nanostructures, each surrounded by a high-k gate dielectric, and a gate electrode containing two different work function metals with a metal residue at the interface between them.
- The device includes a first nanostructure and a second nanostructure stacked on top of each other.
- Each nanostructure is surrounded by a high-k gate dielectric material.
- The gate electrode, located above the nanostructures, consists of two different work function metals.
- A metal residue is present at the interface between the two work function metals.
Potential Applications
This technology could be applied in the development of advanced transistors for high-performance electronic devices, such as smartphones, computers, and other semiconductor devices.
Problems Solved
This innovation addresses the challenge of improving the performance and efficiency of electronic devices by optimizing the gate electrode structure in nanoscale transistors.
Benefits
The use of different work function metals in the gate electrode can enhance the device's electrical properties, leading to improved speed, power efficiency, and overall performance of electronic devices.
Potential Commercial Applications
- Advanced semiconductor devices
- High-performance electronic components
- Next-generation computing systems
Possible Prior Art
One possible prior art could be the use of different metal combinations in gate electrodes to improve transistor performance. Research on metal residue at metal interfaces in electronic devices may also exist.
What are the potential implications of this technology in the field of nanoelectronics?
The technology described in the patent application could have significant implications in the field of nanoelectronics by enabling the development of more efficient and high-performance electronic devices. By optimizing the gate electrode structure with different work function metals, researchers can enhance the functionality and speed of nanoscale transistors, leading to advancements in various applications such as computing, telecommunications, and consumer electronics.
How does the presence of a metal residue at the interface between the two work function metals impact the performance of the device?
The metal residue at the interface between the two work function metals in the gate electrode could potentially affect the electrical properties and overall performance of the device. It may influence the charge carrier mobility, threshold voltage, and other key parameters of the transistor, ultimately impacting its speed, power efficiency, and reliability. Further research and testing would be needed to fully understand the implications of this metal residue on the device's performance.
Original Abstract Submitted
A device includes a first nanostructure; a second nanostructure over the first nanostructure; a first high-k gate dielectric around the first nanostructure; a second high-k gate dielectric around the second nanostructure; and a gate electrode over the first and second high-k gate dielectrics. The gate electrode includes a first work function metal; a second work function metal over the first work function metal; and a first metal residue at an interface between the first work function metal and the second work function metal, wherein the first metal residue has a metal element that is different than a metal element of the first work function metal.
