18513619. SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND METHODS OF FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Guan-Lin Chen of Hsinchu (TW)

Kuo-Cheng Chiang of Hsinchu (TW)

Shi Ning Ju of Hsinchu (TW)

Jung-Chien Cheng of Hsinchu (TW)

Chih-Hao Wang of Hsinchu (TW)

Kuan-Lun Cheng of Hsinchu (TW)

SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18513619 titled 'SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND METHODS OF FORMING THE SAME

Simplified Explanation

The abstract describes a method of forming a semiconductor device structure by creating a first dielectric feature between two fin structures, removing certain semiconductor layers, trimming the dielectric feature, and forming a gate electrode layer around the remaining semiconductor layers.

• The method involves forming a first dielectric feature between two fin structures composed of alternating semiconductor layers.
• The second semiconductor layers are removed to allow the first semiconductor layers to extend laterally from the dielectric feature.
• The dielectric feature is trimmed to reduce its thickness on both sides.
• A gate electrode layer is then formed to surround each of the remaining semiconductor layers.

Potential Applications

This technology could be applied in the manufacturing of advanced semiconductor devices, such as transistors and integrated circuits.

Problems Solved

This technology helps in improving the performance and efficiency of semiconductor devices by optimizing the structure and functionality of the components.

Benefits

The benefits of this technology include enhanced device performance, increased integration density, and improved power efficiency in semiconductor devices.

Potential Commercial Applications

This technology could be utilized in the production of high-performance electronic devices for various industries, including telecommunications, computing, and consumer electronics.

Possible Prior Art

One possible prior art could be the use of similar methods in the fabrication of semiconductor devices, such as FinFET transistors.

How does this technology compare to existing methods of forming semiconductor device structures?

This article does not provide a direct comparison with existing methods, leaving the reader to wonder about the specific advantages and disadvantages of this new approach.

What are the specific performance improvements achieved by implementing this method?

The article does not detail the exact performance enhancements resulting from the use of this technology, leaving the reader curious about the specific benefits in terms of speed, power consumption, and other key metrics.

Original Abstract Submitted

A semiconductor device structure, along with methods of forming such, are described. The method includes forming a first dielectric feature between first and the second fin structures, wherein each first and second fin structure includes first semiconductor layers and second semiconductor layers alternatingly stacked and in contact with the first dielectric layer. The method also includes removing the second semiconductor layers so that the first semiconductor layers of the first and second fin structures extend laterally from a first side and a second side of the first dielectric feature, respectively, trimming the first dielectric feature so that the first dielectric feature has a reduced thickness on both first and the second sides, and forming a gate electrode layer to surround each of the first semiconductor layers of the first and second fin structures.