18421552. DIAGONAL VIA MANUFACTURING METHOD simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 DIAGONAL VIA MANUFACTURING METHOD
DIAGONAL VIA MANUFACTURING METHOD
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Chih-Min Hsiao of Hsinchu (TW)
Ching-Hsu Chang of Hsinchu (TW)
Jiann-Tyng Tzeng of Hsinchu (TW)
DIAGONAL VIA MANUFACTURING METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18421552 titled 'DIAGONAL VIA MANUFACTURING METHOD
Simplified Explanation
The abstract describes a method of manufacturing via structures in an integrated circuit using an IC photo mask with via features and assist features aligned along alternating diagonal grid lines.
- The method involves aligning the IC photo mask with first metal segments of a semiconductor substrate, performing photolithography processes, and forming via structures at defined locations.
- The via structures are formed at locations corresponding to the via features on the IC photo mask, allowing for precise placement and alignment.
Potential Applications
This technology can be applied in the manufacturing of integrated circuits, semiconductor devices, and electronic components where precise via structures are required.
Problems Solved
This method solves the problem of accurately defining and forming via structures in an integrated circuit, ensuring proper functionality and performance of the device.
Benefits
The benefits of this technology include improved precision in via structure placement, increased manufacturing efficiency, and enhanced overall performance of integrated circuits.
Potential Commercial Applications
This technology can be utilized in the semiconductor industry for the production of advanced integrated circuits, microprocessors, memory devices, and other electronic components.
Possible Prior Art
Prior art in the field of semiconductor manufacturing may include methods for forming via structures using different alignment techniques or mask designs.
Unanswered Questions
How does this method compare to existing techniques for via structure formation in terms of cost and efficiency?
This article does not provide a direct comparison with existing techniques in terms of cost and efficiency. Further research or data analysis would be needed to address this question.
What are the potential limitations or challenges of implementing this method on a large scale in semiconductor manufacturing facilities?
The article does not discuss potential limitations or challenges of implementing this method on a large scale. Additional studies or practical applications may be necessary to identify and address any such issues.
Original Abstract Submitted
A method of manufacturing a plurality of via structures includes providing an integrated circuit (IC) photo mask including via features and assist features positioned exclusively along alternating diagonal grid lines of a grid, aligning the IC photo mask with first metal segments of a first metal layer of a semiconductor substrate, the first metal segments having a first spacing corresponding to a first pitch of the grid, performing one or more photolithography processes including the IC photo mask, thereby defining via structure locations corresponding to the via features, and forming via structures at the defined via structure locations.
