18421602. TEMPERATURE MONITORING DEVICE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

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TEMPERATURE MONITORING DEVICE AND METHOD

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Po-Zeng Kang of Hsinchu (TW)

Wen-Shen Chou of Hsinchu (TW)

Yung-Chow Peng of Hsinchu (TW)

TEMPERATURE MONITORING DEVICE AND METHOD - A simplified explanation of the abstract

This abstract first appeared for US patent application 18421602 titled 'TEMPERATURE MONITORING DEVICE AND METHOD

Simplified Explanation

The semiconductor device described in the abstract includes active area structures, dummy gate layers, a metal layer, and vias for electrical connections. Here are some key points to explain the patent/innovation:

  • The device has active area structures and dummy gate layers for controlling the flow of current.
  • A metal layer spans the active area structures and is used for electrical connections.
  • Vias are positioned at opposite ends of the metal layer for grounding and connecting to a current source.
  • The device includes a circuit for measuring voltage at a specific node.

Potential Applications

The technology described in this patent application could be applied in the following areas:

  • Semiconductor manufacturing
  • Integrated circuit design
  • Electronics industry

Problems Solved

This technology helps solve the following problems:

  • Efficient current control in semiconductor devices
  • Accurate voltage measurement in circuits
  • Improved electrical connections in complex structures

Benefits

The benefits of this technology include:

  • Enhanced performance of semiconductor devices
  • Increased accuracy in voltage measurements
  • Simplified design of integrated circuits

Potential Commercial Applications

The potential commercial applications of this technology could include:

  • Semiconductor device manufacturing companies
  • Electronics component suppliers
  • Research and development firms

Possible Prior Art

One possible prior art for this technology could be the use of vias for electrical connections in semiconductor devices. Older data may show similar structures and configurations in previous patents or publications.

Unanswered Questions

How does this technology compare to existing solutions in the market?

This article does not provide a direct comparison to existing solutions in the market. It would be helpful to know the specific advantages or differences this technology offers compared to current technologies.

What are the specific performance metrics of this technology?

The article does not mention specific performance metrics such as speed, efficiency, or accuracy. Understanding these metrics would provide a clearer picture of the potential impact of this technology.


Original Abstract Submitted

A semiconductor device includes a plurality of active area structures extending in parallel, first and second dummy gate layers spanning the plurality of active area structures, a first active device including first portions of the plurality of active area structures between the first and second dummy gate layers, a metal layer spanning the plurality of active area structures between the first and second dummy gate layers, and a pair of vias positioned at opposite ends of the metal layer. A first via of the pair of vias is configured to be electrically connected to ground, and a second via of the pair of vias is configured to be electrically connected to a current source and a circuit configured to measure a voltage at the node.