17985804. FAST SWITCHING MRAM HAVING AN ALUMINUM-MANGANESE-GERMANIUM FREE LAYER COMBINED WITH A CHROMIUM DIFFUSION BARRIER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
Contents
- 1 FAST SWITCHING MRAM HAVING AN ALUMINUM-MANGANESE-GERMANIUM FREE LAYER COMBINED WITH A CHROMIUM DIFFUSION BARRIER
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 FAST SWITCHING MRAM HAVING AN ALUMINUM-MANGANESE-GERMANIUM FREE LAYER COMBINED WITH A CHROMIUM DIFFUSION BARRIER - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
FAST SWITCHING MRAM HAVING AN ALUMINUM-MANGANESE-GERMANIUM FREE LAYER COMBINED WITH A CHROMIUM DIFFUSION BARRIER
Organization Name
INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor(s)
Matthias Georg Gottwald of Ridgefield CT (US)
Alexander Reznicek of Troy NY (US)
FAST SWITCHING MRAM HAVING AN ALUMINUM-MANGANESE-GERMANIUM FREE LAYER COMBINED WITH A CHROMIUM DIFFUSION BARRIER - A simplified explanation of the abstract
This abstract first appeared for US patent application 17985804 titled 'FAST SWITCHING MRAM HAVING AN ALUMINUM-MANGANESE-GERMANIUM FREE LAYER COMBINED WITH A CHROMIUM DIFFUSION BARRIER
Simplified Explanation
The present invention relates to magnetic tunneling junction (MTJ) pillars with a fast-switching magnetic free layer, a magnetic reference layer, and a tunnel barrier layer. A diffusion barrier layer prevents material diffusion, enabling reduced resistance area (RA) in devices.
- MTJ pillars consist of a magnetic free layer, a magnetic reference layer, and a tunnel barrier layer.
- A diffusion barrier layer prevents material diffusion, reducing resistance area in devices.
- The invention enables devices with faster magnetic orientation switching speeds.
Potential Applications
The technology can be applied in:
- Magnetic random-access memory (MRAM)
- Magnetic sensors
- Spintronic devices
Problems Solved
- Material diffusion in MTJ pillars
- Reduced resistance area in devices
- Faster magnetic orientation switching speeds
Benefits
- Improved performance in MRAM and magnetic sensors
- Enhanced reliability in spintronic devices
- Increased data storage capacity
Potential Commercial Applications
Optimizing MTJ pillars for:
- Next-generation computing devices
- High-speed data storage solutions
- Advanced magnetic sensors
Possible Prior Art
Prior art may include:
- Research on magnetic tunneling junctions
- Studies on material diffusion in magnetic devices
Unanswered Questions
1. How does the use of an AlMnGe alloy impact the performance of the magnetic free layer in MTJ pillars? 2. What specific methods are used to fabricate the fast-switching MTJ pillars with reduced resistance area?
Original Abstract Submitted
Embodiments of the present invention an (or an array of) magnetic tunneling junction (MTJ) pillars, each with a magnetic free layer (containing a fast-switching material like aluminum or a metal like gallium), a magnetic reference layer, and a tunnel barrier layer separating the two magnetic layers. A chromium-containing diffusion barrier layer disposed between the magnetic free layer and tunnel barrier layer prevents aluminum (or gallium) diffusion from the magnetic free layer into a tunnel barrier layer of the MTJ pillar. Devices using and methods of making the fast-switching MTJ(s) are also disclosed. The invention enables devices with reduced resistance area (RA). Embodiments use a AlMnGe alloy to make the magnetic free layer with a tetragonal crystalline structure and a lower magnetic moment that supports higher magnetic orientation switching speeds.
