17986276. BACKSIDE SKIP-LEVEL THROUGH VIA FOR BACKSIDE SIGNAL LINE CONNECTION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

BACKSIDE SKIP-LEVEL THROUGH VIA FOR BACKSIDE SIGNAL LINE CONNECTION

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Ruilong Xie of Niskayuna NY (US)

Biswanath Senapati of Mechanicville NY (US)

David Wolpert of Poughkeepsie NY (US)

Nicholas Anthony Lanzillo of Wynantskill NY (US)

Lawrence A. Clevenger of Saratoga Springs NY (US)

Leon Sigal of Monsey NY (US)

BACKSIDE SKIP-LEVEL THROUGH VIA FOR BACKSIDE SIGNAL LINE CONNECTION - A simplified explanation of the abstract

This abstract first appeared for US patent application 17986276 titled 'BACKSIDE SKIP-LEVEL THROUGH VIA FOR BACKSIDE SIGNAL LINE CONNECTION

Simplified Explanation

A semiconductor structure is described in the patent application, which includes a gate structure connected to a backside signal line through a backside gate contact extension and a backside skip-level through via. The backside skip-level through via features a dielectric spacer on its sidewall and is positioned between backside power rails in a lower metal level.

• Gate structure wired to backside signal line
• Backside skip-level through via with dielectric spacer
• Positioned between backside power rails in lower metal level

Potential Applications

The semiconductor structure described in the patent application could be used in various electronic devices such as smartphones, tablets, laptops, and other portable electronics.

Problems Solved

This technology helps in improving the efficiency and performance of semiconductor devices by providing a reliable connection between the gate structure and the backside signal line.

Benefits

- Enhanced performance of semiconductor devices - Improved reliability of connections - Potential for miniaturization of electronic devices

Potential Commercial Applications

The technology could be applied in the semiconductor industry for the production of advanced integrated circuits and microprocessors.

Possible Prior Art

One possible prior art could be the use of through vias in semiconductor structures for connecting different layers of metal in integrated circuits.

What materials are used in the dielectric spacer of the backside skip-level through via?

The materials used in the dielectric spacer of the backside skip-level through via are not specified in the abstract.

How does the positioning of the backside skip-level through via between backside power rails affect the performance of the semiconductor structure?

The abstract does not provide details on how the positioning of the backside skip-level through via between backside power rails impacts the performance of the semiconductor structure.

Original Abstract Submitted

A semiconductor structure is provided that includes a gate structure that is wired to a backside signal line through a backside gate contact extension and a backside skip-level through via. The backside skip-level through via has a dielectric spacer located on a sidewall thereof and a portion of the backside skip-level through via is positioned between a pair of backside power rails that are located in a first backside metal level that is located beneath a second backside metal level that includes the backside signal line.