18305466. ACCURATE PROGRAMMING OF ANALOG MEMORY DEVICES OF IN-MEMORY PROCESSING DEVICES HAVING A CROSSBAR ARRAY STRUCTURE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

ACCURATE PROGRAMMING OF ANALOG MEMORY DEVICES OF IN-MEMORY PROCESSING DEVICES HAVING A CROSSBAR ARRAY STRUCTURE

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Manuel Le Gallo-bourdeau of Horgen (CH)

Athanasios Vasilopoulos of Zurich (CH)

Benedikt Kersting of Zurich (CH)

[[:Category:Julian Röttger B�chel of Zurich (CH)|Julian Röttger B�chel of Zurich (CH)]][[Category:Julian Röttger B�chel of Zurich (CH)]]

Abu Sebastian of Adliswil (CH)

ACCURATE PROGRAMMING OF ANALOG MEMORY DEVICES OF IN-MEMORY PROCESSING DEVICES HAVING A CROSSBAR ARRAY STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18305466 titled 'ACCURATE PROGRAMMING OF ANALOG MEMORY DEVICES OF IN-MEMORY PROCESSING DEVICES HAVING A CROSSBAR ARRAY STRUCTURE

Simplified Explanation

The invention is a method of programming memory elements of an in-memory computing (IMC) device. The IMC applies a SET signal to the memory elements of each cell, reads conductance values, and adjusts the conductance values to match a target value.

• IMC applies a SET signal to memory elements to set them to a SET state.
• Reads conductance values of memory elements in the SET state.
• Adjusts the conductance values to match a target value.
• Maximizes the number of memory elements in SET or RESET states.

Potential Applications

This technology could be applied in:

• In-memory computing systems
• Neuromorphic computing
• Artificial intelligence hardware

Problems Solved

• Efficient programming of memory elements
• Matching conductance values to target values
• Maximizing the number of memory elements in desired states

Benefits

• Improved performance of in-memory computing devices
• Enhanced efficiency in programming memory elements
• Optimal utilization of memory resources

Potential Commercial Applications

Optimized Memory Element Programming for In-Memory Computing Devices

Possible Prior Art

One possible prior art could be the use of traditional programming methods for memory elements in computing devices.

Unanswered Questions

How does this method compare to traditional memory programming techniques?

This article does not provide a direct comparison to traditional memory programming methods, leaving a gap in understanding the advantages of this new approach.

What are the specific conductance values used in the programming process?

The article does not specify the exact conductance values or ranges utilized in the programming of memory elements, which could be crucial for understanding the implementation of this method.

Original Abstract Submitted

The invention is notably directed to a method of programming memory elements of an in-memory computing (IMC) device. The IMC applies a SET signal to the K memory elements of said each cell to set each of the K memory elements to a SET state and reading K conductance values of the K memory elements in the SET state. The IMC adjusts, based on the K conductance values read and the target conductance value, a conductance value of at least one of the K memory elements to match a summed conductance of the K memory elements of said each cell with the target conductance value. The IMC maximizes a number of the K memory elements that are either in their SET state or in a RESET state of zero conductance nominal value, such that at most one of the K memory elements is neither in a SET state nor in a RESET state.