International business machines corporation (20240162319). SPACER CUT FOR ASYMMETRIC SOURCE/DRAIN EPITAXIAL STRUCTURE IN STACKED FET simplified abstract
Contents
- 1 SPACER CUT FOR ASYMMETRIC SOURCE/DRAIN EPITAXIAL STRUCTURE IN STACKED FET
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SPACER CUT FOR ASYMMETRIC SOURCE/DRAIN EPITAXIAL STRUCTURE IN STACKED FET - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SPACER CUT FOR ASYMMETRIC SOURCE/DRAIN EPITAXIAL STRUCTURE IN STACKED FET
Organization Name
international business machines corporation
Inventor(s)
Albert M. Young of Fishkill NY (US)
Ruilong Xie of Niskayuna NY (US)
Prabudhya Roy Chowdhury of Albany NY (US)
Jay William Strane of Warwick NY (US)
SPACER CUT FOR ASYMMETRIC SOURCE/DRAIN EPITAXIAL STRUCTURE IN STACKED FET - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240162319 titled 'SPACER CUT FOR ASYMMETRIC SOURCE/DRAIN EPITAXIAL STRUCTURE IN STACKED FET
Simplified Explanation
The abstract of the patent application describes a stacked device with two epitaxial regions, one of which has an asymmetric profile with a horizontal protrusion where a contact is formed.
- The invention is a stacked device with two epitaxial regions, one of which has an asymmetric profile with a horizontal protrusion.
- A contact is formed on the horizontal protrusion of the first epitaxial region.
Potential Applications
The technology described in this patent application could be applied in the following areas:
- Semiconductor devices
- Integrated circuits
- Power electronics
Problems Solved
The technology addresses the following issues:
- Improving device performance
- Enhancing contact formation
- Increasing efficiency in power electronics
Benefits
The technology offers the following benefits:
- Improved device performance
- Enhanced contact formation
- Increased efficiency in power electronics applications
Potential Commercial Applications
The technology has potential commercial applications in:
- Semiconductor industry
- Electronics manufacturing
- Power electronics market
Possible Prior Art
One possible prior art for this technology could be:
- Stacked devices with multiple epitaxial regions and contacts formed on protrusions.
Unanswered Questions
How does the asymmetric profile of the first epitaxial region impact device performance?
The abstract does not provide specific details on how the asymmetric profile affects the device performance.
What materials are used in the fabrication of the stacked device?
The abstract does not mention the materials used in the fabrication process of the stacked device.
Original Abstract Submitted
embodiments of the invention include a stacked device having a first epitaxial region and a second epitaxial region vertically displaced from the first epitaxial region. the first epitaxial region comprising an asymmetric profile with a horizontal protrusion. a contact is formed on the horizontal protrusion of the first epitaxial region
