International business machines corporation (20240162118). BACKSIDE SKIP-LEVEL THROUGH VIA FOR BACKSIDE SIGNAL LINE CONNECTION simplified abstract

BACKSIDE SKIP-LEVEL THROUGH VIA FOR BACKSIDE SIGNAL LINE CONNECTION

Organization Name

international business machines corporation

Inventor(s)

Ruilong Xie of Niskayuna NY (US)

Biswanath Senapati of Mechanicville NY (US)

David Wolpert of Poughkeepsie NY (US)

Nicholas Anthony Lanzillo of Wynantskill NY (US)

Lawrence A. Clevenger of Saratoga Springs NY (US)

Leon Sigal of Monsey NY (US)

BACKSIDE SKIP-LEVEL THROUGH VIA FOR BACKSIDE SIGNAL LINE CONNECTION - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240162118 titled 'BACKSIDE SKIP-LEVEL THROUGH VIA FOR BACKSIDE SIGNAL LINE CONNECTION

Simplified Explanation

The semiconductor structure described in the abstract includes a gate structure connected to a backside signal line through a backside gate contact extension and a backside skip-level through via. The backside skip-level through via has a dielectric spacer on its sidewall and is positioned between backside power rails in a lower metal level.

• Gate structure wired to backside signal line through backside gate contact extension and backside skip-level through via
• Backside skip-level through via has dielectric spacer on sidewall
• Portion of backside skip-level through via positioned between backside power rails in lower metal level

Potential Applications

The technology described in the patent application could be applied in the manufacturing of advanced semiconductor devices, such as integrated circuits and microprocessors.

Problems Solved

This technology helps in improving the performance and efficiency of semiconductor structures by providing a more reliable and efficient connection between the gate structure and the backside signal line.

Benefits

The benefits of this technology include enhanced signal transmission, reduced power consumption, and increased overall performance of semiconductor devices.

Potential Commercial Applications

Potential commercial applications of this technology could include the production of high-performance electronic devices for various industries such as telecommunications, computing, and automotive.

Possible Prior Art

One possible prior art for this technology could be the use of traditional via structures to connect different layers in semiconductor devices.

How does this technology compare to existing methods of connecting gate structures to signal lines in semiconductor devices?

This article does not provide a direct comparison to existing methods, leaving the reader to wonder about the specific advantages and disadvantages of this new approach.

What are the specific manufacturing processes involved in creating the backside skip-level through via with the dielectric spacer?

The article does not delve into the detailed manufacturing processes, leaving the reader curious about the intricacies of creating this specific component.

Original Abstract Submitted

a semiconductor structure is provided that includes a gate structure that is wired to a backside signal line through a backside gate contact extension and a backside skip-level through via. the backside skip-level through via has a dielectric spacer located on a sidewall thereof and a portion of the backside skip-level through via is positioned between a pair of backside power rails that are located in a first backside metal level that is located beneath a second backside metal level that includes the backside signal line.