Samsung electronics co., ltd. (20240164106). SEMICONDUCTOR DEVICES HAVING GATE ELECTRODES WITH RING-SHAPED SEGMENTS THEREIN simplified abstract

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SEMICONDUCTOR DEVICES HAVING GATE ELECTRODES WITH RING-SHAPED SEGMENTS THEREIN

Organization Name

samsung electronics co., ltd.

Inventor(s)

Dong Jin Lee of Suwon-si (KR)

Jun Hee Lim of Suwon-si (KR)

Kang-Oh Yun of Suwon-si (KR)

SEMICONDUCTOR DEVICES HAVING GATE ELECTRODES WITH RING-SHAPED SEGMENTS THEREIN - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240164106 titled 'SEMICONDUCTOR DEVICES HAVING GATE ELECTRODES WITH RING-SHAPED SEGMENTS THEREIN

Simplified Explanation

The semiconductor device described in the abstract includes an active region, source/drain regions, contacts, and a gate electrode. The gate electrode surrounds one contact but not the other.

  • The semiconductor device has an active region where the main operations take place.
  • It includes source/drain regions for input and output connections.
  • Contacts are placed on the source/drain regions for external connections.
  • The gate electrode controls the flow of current in the active region.
  • The gate electrode has a ring portion that surrounds one contact but not the other.

Potential Applications

The technology described in this semiconductor device could be applied in:

  • Integrated circuits
  • Microprocessors
  • Power electronics

Problems Solved

This technology helps in:

  • Improving performance of semiconductor devices
  • Enhancing efficiency of electronic devices
  • Reducing power consumption

Benefits

The benefits of this technology include:

  • Higher speed and performance
  • Lower power consumption
  • Improved reliability and durability

Potential Commercial Applications

The semiconductor device could be used in various commercial applications such as:

  • Consumer electronics
  • Automotive industry
  • Telecommunications

Possible Prior Art

One possible prior art could be the development of similar semiconductor devices with different gate electrode configurations.

What are the specific materials used in the fabrication of this semiconductor device?

The specific materials used in the fabrication of this semiconductor device are not mentioned in the abstract. Further details or the full patent application would be needed to determine the exact materials used.

How does the configuration of the gate electrode impact the overall performance of the semiconductor device?

The configuration of the gate electrode, with one contact surrounded by a ring portion and the other contact extending outside the ring, could affect the control of current flow in the active region. This configuration may impact the device's speed, power consumption, and overall efficiency, but detailed testing and analysis would be required to fully understand the performance implications.


Original Abstract Submitted

a semiconductor device is provided. the semiconductor device includes an active region, a first source/drain region disposed on the active region, a first contact on the first source/drain region, a second source/drain region spaced apart from the first source/drain region and disposed on the active region, a second contact on the second source/drain region and a first gate electrode disposed on the active region. the first gate electrode includes a first ring portion, which surrounds the first contact, but the second contact extends outside the first ring portion.