Samsung electronics co., ltd. (20240164085). CAPACITOR AND A DRAM DEVICE INCLUDING THE SAME simplified abstract
Contents
- 1 CAPACITOR AND A DRAM DEVICE INCLUDING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 CAPACITOR AND A DRAM DEVICE INCLUDING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
CAPACITOR AND A DRAM DEVICE INCLUDING THE SAME
Organization Name
Inventor(s)
Cheoljin Cho of Hwaseong-si (KR)
CAPACITOR AND A DRAM DEVICE INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240164085 titled 'CAPACITOR AND A DRAM DEVICE INCLUDING THE SAME
Simplified Explanation
A capacitor design with improved performance characteristics is described in the patent application. The capacitor includes a lower electrode, a dielectric layer structure on the lower electrode, and an upper electrode on the dielectric layer structure. The dielectric layer structure consists of multiple dielectric layers with insert layer structures, including zirconium oxide layers and insert layers, between them. This design results in a capacitor with high capacitance and low leakage currents.
- Lower electrode, dielectric layer structure, and upper electrode configuration
- Dielectric layer structure with multiple dielectric layers and insert layer structures
- Insert layer structure composed of zirconium oxide layers and insert layers
- High capacitance and low leakage currents achieved
Potential Applications
The technology can be applied in various electronic devices requiring capacitors with high capacitance and low leakage currents, such as power supplies, filters, and energy storage systems.
Problems Solved
The innovation addresses the need for capacitors with improved performance characteristics, specifically high capacitance and low leakage currents, which are crucial for the efficient operation of electronic devices.
Benefits
The capacitor design offers enhanced performance, reliability, and efficiency in electronic applications. It provides a solution to the limitations of traditional capacitors by improving capacitance and reducing leakage currents.
Potential Commercial Applications
The technology has potential commercial applications in industries that rely on electronic devices, including telecommunications, automotive, aerospace, and consumer electronics. Manufacturers can benefit from using these capacitors in their products to enhance performance and reliability.
Possible Prior Art
One possible prior art could be the use of different dielectric materials in capacitor designs to improve performance characteristics. However, the specific configuration of multiple dielectric layers with insert layer structures, as described in this patent application, may be a novel approach to achieving high capacitance and low leakage currents in capacitors.
Unanswered Questions
How does this capacitor design compare to existing high-performance capacitors on the market?
The article does not provide a direct comparison with other high-performance capacitors currently available. It would be beneficial to understand the specific advantages and disadvantages of this design compared to existing technologies.
What are the manufacturing considerations and costs associated with implementing this capacitor design?
The patent application does not delve into the manufacturing process or cost implications of producing capacitors with this design. Understanding the practical aspects of manufacturing and cost-effectiveness would be essential for assessing the feasibility of widespread adoption of this technology.
Original Abstract Submitted
a capacitor may include a lower electrode, a dielectric layer structure on the lower electrode, and an upper electrode on the dielectric layer structure. the dielectric layer structure may include a plurality of dielectric layers and at least one insert layer structure between ones of the plurality of dielectric layers. the insert layer structure may include a plurality of zirconium oxide layers and at least one insert layer. the insert layer may be between ones of the plurality of zirconium oxide layers. the capacitor may have a high capacitance and low leakage currents.
