Samsung electronics co., ltd. (20240162350). SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
Youngkwan Cha of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240162350 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The abstract describes a semiconductor device with a unique structure, including a substrate, lower electrode, oxide channel, upper electrode, gate insulator, and gate electrode. The oxide channel has vertical extension portions and is doped with ions.
- The semiconductor device includes a substrate, lower electrode, oxide channel, upper electrode, gate insulator, and gate electrode.
- The oxide channel has vertical extension portions and is doped with ions.
Potential Applications
This technology could be applied in:
- Advanced electronic devices
- High-performance computing systems
Problems Solved
This technology helps address:
- Improved performance and efficiency of semiconductor devices
- Enhanced functionality of electronic systems
Benefits
The benefits of this technology include:
- Increased speed and reliability of semiconductor devices
- Greater control and precision in electronic applications
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Semiconductor manufacturing industry
- Consumer electronics market
Possible Prior Art
One possible prior art for this technology could be:
- Previous semiconductor devices with similar structures and functionalities
Unanswered Questions
How does this technology compare to existing semiconductor devices in terms of performance and efficiency?
This article does not provide a direct comparison with existing semiconductor devices in terms of performance and efficiency. Further research and testing would be needed to determine the specific advantages of this technology over current solutions.
What are the specific manufacturing methods involved in producing this semiconductor device?
The article does not delve into the specific manufacturing methods involved in producing this semiconductor device. Understanding the manufacturing process could provide insights into the scalability and cost-effectiveness of implementing this technology.
Original Abstract Submitted
semiconductor devices and manufacturing methods thereof are provided. a semiconductor device includes a substrate, a lower electrode on the substrate, an oxide channel on the lower electrode, the oxide channel including vertical extension portions extending in a first direction perpendicular to the substrate, an upper electrode on the oxide channel, a gate insulator on a portion the oxide channel that is exposed by the lower electrode and the upper electrode, and a gate electrode on the gate insulator, wherein the upper electrode and the lower electrode are separated from each other by the oxide channel in the first direction, and the oxide channel is doped with ions.
