Samsung electronics co., ltd. (20240162346). FIELD EFFECT TRANSISTOR, CAPACITOR, AND ELECTRONIC APPARATUS INCLUDING DOMAIN-CONTROLLED FERROELECTRIC MATERIAL simplified abstract
Contents
- 1 FIELD EFFECT TRANSISTOR, CAPACITOR, AND ELECTRONIC APPARATUS INCLUDING DOMAIN-CONTROLLED FERROELECTRIC MATERIAL
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 FIELD EFFECT TRANSISTOR, CAPACITOR, AND ELECTRONIC APPARATUS INCLUDING DOMAIN-CONTROLLED FERROELECTRIC MATERIAL - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
FIELD EFFECT TRANSISTOR, CAPACITOR, AND ELECTRONIC APPARATUS INCLUDING DOMAIN-CONTROLLED FERROELECTRIC MATERIAL
Organization Name
Inventor(s)
FIELD EFFECT TRANSISTOR, CAPACITOR, AND ELECTRONIC APPARATUS INCLUDING DOMAIN-CONTROLLED FERROELECTRIC MATERIAL - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240162346 titled 'FIELD EFFECT TRANSISTOR, CAPACITOR, AND ELECTRONIC APPARATUS INCLUDING DOMAIN-CONTROLLED FERROELECTRIC MATERIAL
Simplified Explanation
The abstract describes a field effect transistor with a unique gate insulating layer that includes both a ferroelectric crystal structure dominant region and a non-ferroelectric structure dominant region.
- The field effect transistor includes a source region, a drain region, and a channel between them.
- The gate insulating layer covers the upper surface of the channel and consists of a first region with a ferroelectric crystal structure dominant and a second region with a non-ferroelectric structure dominant.
- The gate electrode covers the gate insulating layer and includes a first pattern region facing the first region of the gate insulating layer and a second pattern region facing the second region.
Potential Applications
The technology could be applied in:
- High-speed electronic devices
- Memory storage devices
Problems Solved
This technology addresses issues related to:
- Improving transistor performance
- Enhancing memory storage capabilities
Benefits
The benefits of this technology include:
- Increased efficiency in electronic devices
- Improved data storage and retrieval speeds
Potential Commercial Applications
The field effect transistor innovation could be utilized in:
- Semiconductor industry
- Electronics manufacturing sector
Possible Prior Art
One possible prior art could be the use of ferroelectric materials in memory devices to enhance data retention capabilities.
Unanswered Questions
How does the integration of ferroelectric and non-ferroelectric structures impact the overall performance of the field effect transistor?
The abstract does not provide specific details on how the combination of these structures affects the transistor's functionality and efficiency.
Are there any limitations or drawbacks associated with using a gate insulating layer with a mixed crystal structure?
The abstract does not mention any potential limitations or drawbacks that may arise from incorporating both ferroelectric and non-ferroelectric structures in the gate insulating layer.
Original Abstract Submitted
a field effect transistor includes a source region, a drain region, a channel between the source region and the drain region, a gate insulating layer configured to cover an upper surface of the channel, and a gate electrode configured to cover an upper surface of the gate insulating layer. the gate insulating layer includes a first region where a ferroelectric crystal structure is dominant and a second region where a non-ferroelectric structure is dominant. the gate electrode includes a first pattern region facing the first region of the gate insulating layer and a second pattern region facing the second region of the gate insulating layer.
