Samsung electronics co., ltd. (20240162311). SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240162311 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The semiconductor device described in the abstract includes various patterns and structures that work together to enable its functionality. Here are some key points to note:
- The device includes an active pattern, a channel pattern, and a source/drain pattern on the active pattern.
- The source/drain pattern is connected to the channel pattern.
- A gate electrode is present on the channel pattern.
- An active contact is located on the source/drain pattern.
- An upper contact, adjacent to the active contact, extends into the substrate.
- A lower power interconnection line is buried in the substrate.
- A power delivery network layer is present on the bottom surface of the substrate.
- The lower power interconnection line includes a connection portion connected to the upper contact.
Potential Applications
The technology described in this patent application could be applied in various semiconductor devices, such as integrated circuits, microprocessors, and memory chips.
Problems Solved
This technology helps in improving the performance and efficiency of semiconductor devices by optimizing the power delivery network and interconnection lines.
Benefits
The benefits of this technology include enhanced power distribution, improved signal transmission, and overall better functionality of semiconductor devices.
Potential Commercial Applications
The technology could find commercial applications in the semiconductor industry for the production of advanced electronic devices with higher performance and reliability.
Possible Prior Art
One possible prior art for this technology could be the use of buried interconnection lines in semiconductor devices to improve power distribution and signal transmission.
Unanswered Questions
How does this technology compare to existing power delivery network designs in semiconductor devices?
This article does not provide a direct comparison with existing power delivery network designs in semiconductor devices.
What are the specific performance improvements achieved by implementing this technology?
The article does not detail the specific performance improvements achieved by implementing this technology.
Original Abstract Submitted
a semiconductor device comprising a substrate including an active pattern, a channel pattern and a source/drain pattern that are on the active pattern, the source/drain pattern connected to the channel pattern, a gate electrode on the channel pattern, an active contact on the source/drain pattern, an upper contact being adjacent to the active contact and extending into the substrate, a lower power interconnection line buried in the substrate, and a power delivery network layer on a bottom surface of the substrate, wherein the lower power interconnection line includes a connection portion connected to the upper contact, and a lower portion of the upper contact protrudes into the connection portion.
