Samsung electronics co., ltd. (20240162293). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Organization Name

samsung electronics co., ltd.

Inventor(s)

Jinbum Kim of Seoul (KR)

DAHYE Kim of Seoul (KR)

SEOKHOON Kim of Suwon-si (KR)

JAEMUN Kim of Seoul (KR)

Ilgyou Shin of Seoul (KR)

Haejun Yu of Osan-si (KR)

KYUNGIN Choi of Seoul (KR)

KIHYUN Hwang of Seongnam-si (KR)

SANGMOON Lee of Suwon-si (KR)

SEUNG HUN Lee of Hwaseong-si (KR)

KEUN HWI Cho of Seoul (KR)

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240162293 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Simplified Explanation

The semiconductor device described in the abstract includes a unique structure with stacked semiconductor patterns and source/drain patterns, as well as a gate electrode crossing the channel pattern. One of the source/drain patterns has a first semiconductor layer and a second semiconductor layer, with specific widths in the first direction.

• The semiconductor device has an active pattern on a substrate, source/drain patterns, a channel pattern with stacked semiconductor patterns, and a gate electrode.
• One of the source/drain patterns consists of a first semiconductor layer and a second semiconductor layer, each with specific widths in the first direction.

Potential Applications

This technology could be applied in:

• Advanced electronic devices
• Semiconductor manufacturing

Problems Solved

This technology helps address:

• Improving semiconductor device performance
• Enhancing efficiency in electronic devices

Benefits

The benefits of this technology include:

• Increased functionality in semiconductor devices
• Enhanced performance and reliability
• Potential for miniaturization of electronic components

Potential Commercial Applications

"Semiconductor Device with Stacked Semiconductor Patterns and Source/Drain Patterns" could be used in:

• Consumer electronics
• Telecommunications industry

Possible Prior Art

One possible prior art for this technology could be the development of stacked semiconductor patterns in semiconductor devices.

How does this technology compare to existing semiconductor devices in terms of performance and efficiency?

This article does not provide a direct comparison with existing semiconductor devices to evaluate performance and efficiency.

What are the specific manufacturing processes involved in creating the stacked semiconductor patterns and source/drain patterns in this semiconductor device?

The article does not detail the specific manufacturing processes used to create the unique structure of stacked semiconductor patterns and source/drain patterns in this semiconductor device.

Original Abstract Submitted

a semiconductor device includes an active pattern on a substrate, a pair of source/drain patterns on the active pattern, a channel pattern between the pair of source/drain patterns, the channel pattern including semiconductor patterns stacked to be spaced apart from each other, and a gate electrode crossing the channel pattern and extending in a first direction. one of the pair of source/drain patterns includes a first semiconductor layer and a second semiconductor layer thereon. the first semiconductor layer is in contact with a first semiconductor pattern, which is one of the stacked semiconductor patterns. the largest widths of the first semiconductor pattern, the first semiconductor layer, and the second semiconductor layer in the first direction are a first width, a second width, a third width, respectively, and the second width is larger than the first width and smaller than the third width.