Samsung electronics co., ltd. (20240162281). SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.9.1 Unanswered Questions
- 1.9.2 How does this technology compare to existing semiconductor device designs in terms of performance and efficiency?
- 1.9.3 What are the specific manufacturing processes involved in creating the electrode and supporter layer configuration described in the patent application?
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Hyungsuk Jung of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240162281 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes a substrate, lower electrodes, a supporter layer, a dielectric layer, and an upper electrode. The lower electrodes consist of a first lower electrode and a second lower electrode, with the supporter layer in contact with the side surface of the first lower electrode. The uppermost end of the second lower electrode is higher than the upper surface of the first supporter layer.
- Lower electrodes: Consist of a first lower electrode and a second lower electrode stacked on top of each other.
- Supporter layer: Contacts the side surface of the upper region of the first lower electrode.
- Dielectric layer: Positioned on top of the lower electrodes and the supporter layer.
- Upper electrode: Located on the dielectric layer.
Potential Applications
The technology described in the patent application could be applied in the manufacturing of advanced semiconductor devices, such as capacitors and memory storage units.
Problems Solved
This technology solves the problem of improving the efficiency and performance of semiconductor devices by optimizing the design and layout of the electrodes and supporter layers.
Benefits
The benefits of this technology include enhanced functionality, increased reliability, and improved overall performance of semiconductor devices.
Potential Commercial Applications
The potential commercial applications of this technology could be in the semiconductor industry for the production of high-performance electronic devices.
Possible Prior Art
One possible prior art for this technology could be the use of similar electrode and supporter layer configurations in other semiconductor devices.
Unanswered Questions
How does this technology compare to existing semiconductor device designs in terms of performance and efficiency?
This article does not provide a direct comparison with existing semiconductor device designs to evaluate performance and efficiency.
What are the specific manufacturing processes involved in creating the electrode and supporter layer configuration described in the patent application?
The article does not delve into the specific manufacturing processes required to create the electrode and supporter layer configuration.
Original Abstract Submitted
a semiconductor device may include a substrate; a plurality of lower electrodes on the substrate; at least one supporter layer in contact with the plurality of lower electrodes; a dielectric layer on the plurality of lower electrodes and the at least one supporter layer; and an upper electrode on the dielectric layer. each of the plurality of lower electrodes may include a first lower electrode and a second lower electrode on the first lower electrode. the at least one supporter layer may include a first supporter layer in contact with a side surface of an upper region of the first lower electrode. a level of an uppermost end of the second lower electrode may be higher than a level of an upper surface of the first supporter layer.
