Samsung electronics co., ltd. (20240162120). SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Heon Jong Shin of Suwon-si (KR)
Jin Young Park of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240162120 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes multiple active patterns, gate electrodes, and active cuts on a substrate. Here is a simplified explanation of the patent application:
- The semiconductor device has three active patterns on a substrate, with gate electrodes on the first active pattern.
- Active cuts are present between the active patterns, spaced apart from each other and the gate electrodes.
- Vias extend vertically through the active patterns and into the substrate.
Potential Applications
The technology described in this patent application could be used in:
- Integrated circuits
- Microprocessors
- Memory devices
Problems Solved
This technology helps in:
- Increasing efficiency of semiconductor devices
- Enhancing performance of electronic devices
Benefits
The benefits of this technology include:
- Improved functionality of semiconductor devices
- Higher processing speeds
- Enhanced reliability
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Electronics industry
- Semiconductor manufacturing sector
- Research and development companies
Possible Prior Art
One possible prior art for this technology could be:
- Existing semiconductor devices with similar active patterns and cuts
Unanswered Questions
How does this technology compare to existing semiconductor devices in terms of performance and efficiency?
This question can be answered by conducting comparative studies and performance tests between the new technology and existing devices.
What are the potential challenges in implementing this technology on a large scale for commercial production?
This question can be addressed by analyzing the scalability and manufacturing processes required for mass production of semiconductor devices using this technology.
Original Abstract Submitted
a semiconductor device is provided. the semiconductor device includes first through third active patterns extending in and spaced apart from each other along a first direction on a first surface of a substrate; a first gate electrode extending in a second direction on the first active pattern; a first active cut between the first and second active patterns, wherein the first active cut extends in the second direction, and the first active cut is spaced apart from the first gate electrode in the first direction; a second active cut between the second and third active patterns, wherein the second active cut extends in the second direction, and the second active cut is spaced apart from the first active cut in the first direction; and a first through via extending vertically through the second active pattern between the first and second active cuts, and into the substrate.
