Samsung electronics co., ltd. (20240162096). METHOD OF FABRICATING A SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 METHOD OF FABRICATING A SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD OF FABRICATING A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
METHOD OF FABRICATING A SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Seongkeun Cho of Suwon-si (KR)
Taemin Earmme of Hwaseong-si (KR)
METHOD OF FABRICATING A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240162096 titled 'METHOD OF FABRICATING A SEMICONDUCTOR DEVICE
Simplified Explanation
The method described in the patent application involves fabricating a semiconductor device by forming a parent pattern, an upper thin film, and a child pattern, measuring diffraction light from these patterns, and performing an overlay measurement process using the diffraction light to obtain an overlay measurement value.
- Forming a parent pattern
- Forming an upper thin film on the parent pattern
- Forming a child pattern on the upper thin film
- Measuring diffraction light from the parent and child patterns
- Obtaining an intensity difference curve of the diffraction light versus its wavelength
- Performing an overlay measurement process using the diffraction light to obtain an overlay measurement value
Potential Applications
The technology can be applied in the semiconductor industry for fabricating advanced semiconductor devices with improved accuracy and precision in overlay measurements.
Problems Solved
This technology addresses the challenge of achieving precise overlay measurements in semiconductor device fabrication processes, which is crucial for ensuring the performance and reliability of the devices.
Benefits
The method offers a more efficient and accurate way of measuring overlay in semiconductor device fabrication, leading to enhanced device performance and yield.
Potential Commercial Applications
The technology can be utilized by semiconductor manufacturers to improve the quality and reliability of their products, ultimately increasing customer satisfaction and market competitiveness.
Possible Prior Art
Prior art in the field of semiconductor device fabrication may include methods for overlay measurement using different techniques such as optical microscopy, electron beam lithography, and atomic force microscopy.
Unanswered Questions
How does this technology compare to existing overlay measurement methods in terms of accuracy and efficiency?
The article does not provide a direct comparison between this technology and existing overlay measurement methods. Further research or testing may be needed to evaluate the performance of this method against traditional techniques.
What are the potential limitations or challenges in implementing this technology in large-scale semiconductor manufacturing processes?
The article does not discuss any potential limitations or challenges that may arise when implementing this technology in industrial-scale semiconductor manufacturing. Additional studies or experiments could help identify and address any such issues.
Original Abstract Submitted
a method of fabricating a semiconductor device is disclosed. the method may include forming a parent pattern, forming an upper thin film on the parent pattern, forming a child pattern on the upper thin film, measuring a diffraction light from the parent and child patterns to obtain an intensity difference curve of the diffraction light versus its wavelength, and performing an overlay measurement process on the parent and child patterns using the diffraction light, which has the same wavelength as a peak of the intensity difference curve located near a peak of reflectance of the parent and child patterns, to obtain an overlay measurement value.
