Samsung electronics co., ltd. (20240162039). METHOD FOR MANUFACTURING PHOTOMASK AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME simplified abstract
Contents
- 1 METHOD FOR MANUFACTURING PHOTOMASK AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD FOR MANUFACTURING PHOTOMASK AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
METHOD FOR MANUFACTURING PHOTOMASK AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
Organization Name
Inventor(s)
Bong Cheol Kim of Suwon-si (KR)
METHOD FOR MANUFACTURING PHOTOMASK AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240162039 titled 'METHOD FOR MANUFACTURING PHOTOMASK AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
Simplified Explanation
The method described in the abstract is for manufacturing a photomask by providing a pre-photomask with different areas for duty corrections, forming a pre-photoresist pattern with a stepped shape, analyzing the profile of the pattern, and inserting an auxiliary pattern based on the analysis results.
- Pre-photomask with first, second, and third areas for duty corrections
- Formation of pre-photoresist pattern with a stepped shape
- Analysis of the profile of the pre-photoresist pattern
- Insertion of an auxiliary pattern based on the analysis results
Potential Applications
The technology described in this patent application could be used in the manufacturing of photomasks for semiconductor devices, LCD panels, and other electronic components that require precise patterning.
Problems Solved
This technology solves the problem of accurately correcting duty corrections in photomasks, ensuring that the final patterns are aligned and accurate for the production of high-quality electronic components.
Benefits
The benefits of this technology include improved accuracy in duty corrections, leading to higher quality and more reliable electronic components. It also allows for more efficient manufacturing processes with reduced errors.
Potential Commercial Applications
- Semiconductor industry: for the production of advanced semiconductor devices
- Display industry: for manufacturing high-resolution LCD panels
- Electronics manufacturing: for precise patterning of electronic components
Possible Prior Art
One possible prior art in this field could be the use of similar methods for duty corrections in photomask manufacturing, but with different approaches to achieving accurate patterning.
Unanswered Questions
How does this method compare to existing techniques in terms of accuracy and efficiency?
This article does not provide a direct comparison to existing techniques, so it is unclear how this method stacks up against current practices in the industry. Further research or testing would be needed to determine the advantages of this method over others.
What are the potential limitations or challenges in implementing this technology on a large scale?
The article does not address any potential limitations or challenges that may arise when implementing this technology on a large scale. It would be important to consider factors such as cost, scalability, and compatibility with existing manufacturing processes to assess the feasibility of widespread adoption.
Original Abstract Submitted
provided is a method for manufacturing a photomask. the method comprises providing a pre-photomask, the pre-photomask including a first area, a second area configured to perform a first duty correction, and a third area configured to perform a second duty correction; forming a pre-photoresist pattern using the pre-photomask such that the pre-photoresist pattern has a stepped shape having at least three steps in a cross-sectional view of the pre-photoresist pattern; analyzing a profile of the pre-photoresist pattern in the cross-sectional view; and inserting an auxiliary pattern into at least one of the first to third areas, based on a result of the analyzing of the profile of the pre-photoresist pattern.