Samsung electronics co., ltd. (20240161810). MEMORY DEVICE simplified abstract
Contents
- 1 MEMORY DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MEMORY DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
MEMORY DEVICE
Organization Name
Inventor(s)
SEUNG-JUN Lee of Suwon-si (KR)
MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240161810 titled 'MEMORY DEVICE
Simplified Explanation
The memory device described in the abstract includes a memory cell array, column selection lines, bit line sense amplifiers, local sense amplifiers, control logic circuit, and column decoder.
- The memory cell array consists of word lines and bit lines for storing data.
- The column selection lines are divided into two parts, with one part connected to the memory cell array and the other part connected to the first part.
- Bit line sense amplifiers are connected to the bit lines and are responsible for sensing data stored in the memory cells.
- Local sense amplifiers output the sensed data from the bit line sense amplifiers through column selection transistors connected to local column selection lines.
- The control logic circuit generates row and column address signals to activate specific word and bit lines.
- The column decoder activates a column selection line based on the column address signal.
Potential Applications
The technology described in this patent application could be applied in:
- Computer memory systems
- Solid-state drives
- Embedded systems
Problems Solved
This technology helps in:
- Improving memory access speed
- Enhancing data storage efficiency
- Reducing power consumption
Benefits
The benefits of this technology include:
- Faster data retrieval
- Higher data storage capacity
- Lower energy consumption
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Consumer electronics
- Data centers
- Automotive industry
Possible Prior Art
One possible prior art for this technology could be the use of similar memory cell arrays and sense amplifiers in existing memory devices.
Unanswered Questions
How does this technology compare to existing memory devices in terms of speed and efficiency?
This article does not provide a direct comparison with existing memory devices to evaluate its speed and efficiency.
Are there any limitations or drawbacks to implementing this technology in practical applications?
The article does not mention any potential limitations or drawbacks that may arise when implementing this technology in real-world scenarios.
Original Abstract Submitted
a memory device includes a memory cell array which includes a plurality of word lines and a plurality of bit lines; a plurality of column selection lines which extends over the memory cell array and includes a first part of the memory cell array and a second part connected to the first part; a plurality of bit line sense amplifiers each connected to a bit line and configured to sense data stored in a memory cell; a plurality of local sense amplifiers each configured to output the sensed data from one of the bit line sense amplifiers through a column selection transistor connected to a local column selection line; a control logic circuit which generates a row address signal indicating an activation word line and a column address signal indicating an activation bit line; and a column decoder which activates a column selection line based on the column address signal.
