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20250164882. Positive Resist C (SHIN-ETSU CHEMICAL ., .)

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Revision as of 10:58, 25 May 2025 by Wikipatents (talk | contribs) (Automated patent report)
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POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS

Abstract: the positive resist composition comprises a base polymer comprising repeat units (a) having a sulfonium salt structure of an iodized phenol compound. the positive resist composition comprising a base polymer comprising repeat units having a sulfonium salt structure of an iodized phenol exhibits a high sensitivity and resolution, and forms a pattern of satisfactory profile with reduced edge roughness and dimensional variation.

Inventor(s): Jun Hatakeyama

CPC Classification: G03F7/0392 (Macromolecular compounds which are photodegradable, e.g. positive electron resists ( takes precedence; macromolecular quinonediazides ))

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