18681307. THIN FILM TRANSISTOR DEVICE AND MANUFACTURING METHOD THEREOF, COMPOSITE ETCHING SOLUTION AND ARRAY SUBSTRATE (BOE Technology Group Co., Ltd.)

THIN FILM TRANSISTOR DEVICE AND MANUFACTURING METHOD THEREOF, COMPOSITE ETCHING SOLUTION AND ARRAY SUBSTRATE

Organization Name

BOE Technology Group Co., Ltd.

Inventor(s)

Zhaojian Wu of Beijing CN

Fugang Zhang of Beijing CN

Yadong Xu of Beijing CN

Xiaoqi Zheng of Beijing CN

Yingying Xia of Beijing CN

Rui Zhang of Beijing CN

Dingli Yi of Beijing CN

Ruihao Zhang of Beijing CN

Shengbiao Yang of Beijing CN

Yue Zhang of Beijing CN

Mengxiang Sun of Beijing CN

Gang Peng of Beijing CN

Mingdi Qiao of Beijing CN

Ziheng Yang of Beijing CN

Gao Lu of Beijing CN

Wei Dai of Beijing CN

Zhenyu Wang of Beijing CN

THIN FILM TRANSISTOR DEVICE AND MANUFACTURING METHOD THEREOF, COMPOSITE ETCHING SOLUTION AND ARRAY SUBSTRATE

This abstract first appeared for US patent application 18681307 titled 'THIN FILM TRANSISTOR DEVICE AND MANUFACTURING METHOD THEREOF, COMPOSITE ETCHING SOLUTION AND ARRAY SUBSTRATE

Original Abstract Submitted

The embodiments of the disclosure provide a thin film transistor device and a manufacturing method thereof, a composite etching solution, and an array substrate, the method includes: forming an active structure material layer including an active material layer and an ohmic contact material layer, and a source/drain material layer on a base substrate; performing a wet etching process on the source/drain material layer and the active structure material layer using a composite etching solution including a first etching solution and a second etching solution, so as to form a source/drain electrode layer and an active structure including an active layer and an ohmic contact layer, wherein the wet etching process includes: etching the source/drain material layer and oxidizing a portion of the active structure material layer, and etching an oxidized portion of the active structure material layer.