Intel corporation (20250151344). INTEGRATED CIRCUIT STRUCTURE WITH VARIED INTERNAL SPACERS AND EPITAXIAL SOURCE OR DRAIN STRUCTURES

INTEGRATED CIRCUIT STRUCTURE WITH VARIED INTERNAL SPACERS AND EPITAXIAL SOURCE OR DRAIN STRUCTURES

Organization Name

intel corporation

Inventor(s)

Leonard P. Guler of Hillsboro OR US

Charles H. Wallace of Portland OR US

INTEGRATED CIRCUIT STRUCTURE WITH VARIED INTERNAL SPACERS AND EPITAXIAL SOURCE OR DRAIN STRUCTURES

This abstract first appeared for US patent application 20250151344 titled 'INTEGRATED CIRCUIT STRUCTURE WITH VARIED INTERNAL SPACERS AND EPITAXIAL SOURCE OR DRAIN STRUCTURES

Original Abstract Submitted

integrated circuit structures having varied internal spacers and epitaxial source or drain structures are described. in an example, an integrated circuit structure includes first, second and third pluralities of horizontally stacked nanowires or fins, and first, second and third gate stacks. a first epitaxial source or drain structure is between the first plurality of horizontally stacked nanowires or fin and the second plurality of horizontally stacked nanowires or fin, the first epitaxial source or drain structure between first internal spacers having a maximum lateral width. a second epitaxial source or drain structure is between the second plurality of horizontally stacked nanowires or fin and the third plurality of horizontally stacked nanowires or fin, the second epitaxial source or drain structure between second internal spacers having a maximum lateral width greater than the maximum lateral width of the first internal spacers.