Intel corporation (20250151338). GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING ASYMMETRIC SOURCE AND DRAIN CONTACT STRUCTURES
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING ASYMMETRIC SOURCE AND DRAIN CONTACT STRUCTURES
Organization Name
Inventor(s)
Biswajeet Guha of Hillsboro OR US
Mauro J. Kobrinsky of Portland OR US
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING ASYMMETRIC SOURCE AND DRAIN CONTACT STRUCTURES
This abstract first appeared for US patent application 20250151338 titled 'GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING ASYMMETRIC SOURCE AND DRAIN CONTACT STRUCTURES
Original Abstract Submitted
gate-all-around integrated circuit structures having asymmetric source and drain contact structures, and methods of fabricating gate-all-around integrated circuit structures having asymmetric source and drain contact structures, are described. for example, an integrated circuit structure includes a vertical arrangement of nanowires above a fin. a gate stack is over the vertical arrangement of nanowires. a first epitaxial source or drain structure is at a first end of the vertical arrangement of nanowires. a second epitaxial source or drain structure is at a second end of the vertical arrangement of nanowires. a first conductive contact structure is coupled to the first epitaxial source or drain structure. a second conductive contact structure is coupled to the second epitaxial source or drain structure. the second conductive contact structure is deeper along the fin than the first conductive contact structure.
