19006753. PASSIVATION STRUCTURE WITH PLANAR TOP SURFACES (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)

PASSIVATION STRUCTURE WITH PLANAR TOP SURFACES

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor(s)

Yi-Hsiu Chen of Hsinchu TW

Wen-Chih Chiou of Zhunan Township TW

Chen-Hua Yu of Hsinchu TW

PASSIVATION STRUCTURE WITH PLANAR TOP SURFACES

This abstract first appeared for US patent application 19006753 titled 'PASSIVATION STRUCTURE WITH PLANAR TOP SURFACES

Original Abstract Submitted

A method includes forming a first passivation layer, forming a metal pad over the first passivation layer, forming a planarization layer having a planar top surface over the metal pad, and patterning the planarization layer to form a first opening. A top surface of the metal pad is revealed through the first opening. The method further includes forming a polymer layer extending into the first opening, and patterning the polymer layer to form a second opening. The top surface of the metal pad is revealed through the second opening.