Samsung electronics co., ltd. (20240128330). INTEGRATED CIRCUIT DEVICES AND METHODS OF MANUFACTURING THE SAME simplified abstract

INTEGRATED CIRCUIT DEVICES AND METHODS OF MANUFACTURING THE SAME

Organization Name

samsung electronics co., ltd.

Inventor(s)

Joonyoung Choi of Suwon-si (KR)

INTEGRATED CIRCUIT DEVICES AND METHODS OF MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240128330 titled 'INTEGRATED CIRCUIT DEVICES AND METHODS OF MANUFACTURING THE SAME

Simplified Explanation

The integrated circuit device described in the patent application includes a substrate with an active area, a bit line, a direct contact connecting the bit line to the active area, a spacer structure on the sidewalls of the bit line and direct contact, and a field passivation layer between the sidewalls of the direct contact and the spacer structure. The field passivation layer may contain nonstoichiometric silicon oxide with a specific range of composition and a thickness of less than about 25 Å.

• The integrated circuit device has a direct contact connecting the bit line to the active area.
• A spacer structure and a field passivation layer are provided to enhance the performance and reliability of the device.

Potential Applications

This technology can be applied in:

• Semiconductor manufacturing
• Memory devices
• Microprocessors

Problems Solved

• Improved electrical coupling between the bit line and active area
• Enhanced reliability and performance of the integrated circuit device

Benefits

• Increased efficiency in data transfer
• Reduced risk of electrical interference
• Extended lifespan of the device

Potential Commercial Applications

Optimizing Integrated Circuit Devices with Direct Contact and Field Passivation Layer

Possible Prior Art

Prior art may include similar techniques used in semiconductor manufacturing processes to improve device performance and reliability.

Unanswered Questions

How does the composition of the field passivation layer impact the overall performance of the integrated circuit device?

The specific composition of the field passivation layer, particularly the nonstoichiometric silicon oxide content, plays a crucial role in determining the effectiveness of the passivation layer in protecting the device and enhancing its electrical properties.

What are the potential challenges in scaling up this technology for mass production in semiconductor manufacturing facilities?

Scaling up the production of integrated circuit devices with direct contact and field passivation layers may pose challenges in terms of maintaining consistency in material composition, thickness, and overall device performance across large batches of chips. Additional research and development may be required to address these scalability issues.

Original Abstract Submitted

an integrated circuit device includes a substrate having an active area therein, a bit line on the substrate, and a direct contact, which extends between the active area and the bit line and electrically couples the bit line to a portion of the active area. a spacer structure is also provided, which extends on sidewalls of the bit line and on sidewalls of the direct contact. afield passivation layer is provided, which extends between the sidewalls of the direct contact and the spacer structure. the spacer structure and the field passivation layer may include different materials, and the field passivation layer may directly contact the sidewalls of the direct contact. the field passivation layer can include nonstoichiometric silicon oxide sio, where 0.04≤x≤0.4, and may have a thickness of less than about 25 Å.